JANS2N3634L-Transistor Overview
The JANS2N3634L transistor is a high-performance NPN bipolar junction transistor designed for reliable switching and amplification in industrial and aerospace applications. Featuring a robust TO-18 metal can package, it offers excellent thermal stability and durability under harsh conditions. This transistor supports collector currents up to 3A with a maximum collector-emitter voltage of 80V, making it suitable for medium-power applications requiring consistent performance. Its low saturation voltage and high gain ensure efficient operation in demanding environments. Sourced from a trusted IC Manufacturer, this device is optimized for engineers seeking dependable transistor solutions with long-term reliability.
JANS2N3634L-Transistor Key Features
- High Collector Current Handling: Supports up to 3A collector current, enabling robust power switching and amplification capabilities.
- Wide Voltage Range: Maximum collector-emitter voltage of 80V ensures operation in medium-voltage circuits with margin for transient conditions.
- TO-18 Metal Can Package: Provides enhanced thermal dissipation and mechanical durability, crucial for aerospace and military-grade applications.
- Low Saturation Voltage: Minimizes power loss during switching, improving overall system efficiency and reducing heat generation.
- High DC Current Gain (hFE): Facilitates effective signal amplification and easy drive requirements in control circuits.
- Military Specification Compliance: Built to meet stringent quality and reliability standards required for defense and aerospace use.
- Thermally Stable Construction: Ensures consistent performance over a wide temperature range, supporting operation in extreme environments.
JANS2N3634L-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 80 | V |
| Collector-Base Voltage (Vcbo) | 100 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 3 | A |
| DC Current Gain (hFE) | 40 – 160 | (typical range) |
| Power Dissipation (Pd) | 1 | W |
| Transition Frequency (fT) | 80 | MHz |
| Operating Junction Temperature (Tj) | -65 to +200 | ??C |
| Package Type | TO-18 Metal Can | ?C |
JANS2N3634L-Transistor Advantages vs Typical Alternatives
This transistor offers a unique combination of high collector current capability and wide voltage tolerance within a robust TO-18 package, delivering superior thermal stability and reliability compared to typical plastic-encapsulated devices. Its military-grade construction ensures dependable operation in demanding environments where precision, longevity, and resistance to mechanical stress are critical, making it an optimal choice for aerospace and industrial applications requiring rugged performance.
🔥 Best-Selling Products
-
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
-
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
-
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
-
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Switching and amplification in aerospace and military communication systems, where reliability under extreme temperature and mechanical stress is essential.
- Industrial control circuits requiring medium power handling combined with stable gain for signal amplification.
- High-frequency amplification tasks benefiting from its transition frequency of 80 MHz and low saturation voltage.
- Power management applications involving switching regulators and drivers where thermal stability extends device life.
JANS2N3634L-Transistor Brand Info
The JANS2N3634L is produced under strict military and aerospace standards, reflecting a commitment to quality and performance. This transistor series is known for its metal-can packaging and rigorous testing processes, ensuring long-term reliability even in the harshest operating conditions. The brand behind this product prioritizes precision manufacturing and thorough quality control, making it a trusted component in critical electronic assemblies where failure is not an option.
FAQ
What is the maximum collector current allowed for this transistor?
The device supports a maximum collector current of 3 amperes, suitable for medium-power circuits requiring robust switching and amplification capabilities.
🌟 Featured Products
-
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What package type does this transistor use, and why is it important?
This transistor is housed in a TO-18 metal can package, which offers improved thermal dissipation and mechanical durability compared to plastic packages. This makes it well-suited for aerospace and military applications where environmental stress is a concern.
What voltage ratings are specified for this transistor?
The maximum collector-emitter voltage is rated at 80 volts, while the collector-base voltage can withstand up to 100 volts. The emitter-base voltage is rated at 5 volts, defining the device??s safe operating limits.
📩 Contact Us
Is this transistor suitable for high-frequency applications?
Yes, with a transition frequency of approximately 80 MHz, this transistor can be effectively used in moderate high-frequency amplification and switching applications.
What temperature range can this transistor operate within?
The operating junction temperature range is from -65??C to +200??C, allowing reliable performance in extreme temperature environments typical of industrial and aerospace conditions.
