JANS2N3507L-Transistor Overview
The JANS2N3507L is a high-reliability PNP bipolar junction transistor designed for military and aerospace applications requiring stringent quality and performance standards. This transistor offers robust electrical characteristics with a maximum collector-emitter voltage of 60V and a collector current capability of up to 2A, making it suitable for medium power amplification and switching tasks. Its hermetic metal can package ensures enhanced durability in harsh environments, providing long-term stability and resistance to temperature extremes. Ideal for critical industrial circuits, the device is produced and tested to meet rigorous IC Manufacturer standards, ensuring dependable operation in demanding systems.
JANS2N3507L-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Bipolar Junction | ?C |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 2 | A |
| Power Dissipation (Ptot) | 1.0 | W |
| DC Current Gain (hFE) | 40 to 320 | ?C |
| Transition Frequency (fT) | 50 | MHz |
| Operating Temperature Range | -65 to +200 | ??C |
| Package Type | Hermetic Metal Can (TO-18) | ?C |
JANS2N3507L-Transistor Key Features
- High Voltage Handling: With a collector-emitter voltage rating of 60V, this transistor supports medium power applications requiring reliable voltage endurance.
- Robust Current Capacity: Supports continuous collector currents up to 2A, enabling efficient switching and amplification in industrial circuits.
- Wide Operating Temperature Range: Rated from -65??C to +200??C, ensuring dependable performance in extreme environmental conditions.
- Hermetic Metal Can Packaging: Provides superior protection against moisture and mechanical stress, enhancing reliability in aerospace and military-grade applications.
- Broad DC Current Gain Range: Offers flexibility in design with a gain range between 40 and 320, suitable for varied amplification requirements.
- High Transition Frequency: 50 MHz frequency response supports fast switching speeds necessary for high-frequency industrial electronics.
Typical Applications
- Used extensively in military and aerospace circuits where high reliability and environmental robustness are critical, such as avionics signal amplification and switching.
- Ideal for industrial control systems requiring stable medium-power transistor performance under fluctuating temperature conditions.
- Suitable for precision analog circuits, including low-noise amplifiers and robust driver stages in communication equipment.
- Employed in power management modules where reliable switching and durability directly impact system uptime and safety.
JANS2N3507L-Transistor Advantages vs Typical Alternatives
This transistor stands out for its hermetic metal can packaging, which offers superior environmental protection compared to plastic-encapsulated alternatives. Its broad operating temperature range and high voltage and current ratings provide enhanced robustness and flexibility for demanding industrial and military applications. The wide DC gain range and fast transition frequency further improve circuit design options, ensuring efficient amplification and switching performance with increased reliability.
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JANS2N3507L-Transistor Brand Info
The JANS2N3507L is a military-grade transistor manufactured under strict quality controls to meet defense and aerospace standards. It is produced by reputable semiconductor manufacturers specializing in high-reliability discrete components. These manufacturers adhere to rigorous testing and screening processes, including burn-in and parameter verification, to ensure that each device meets the JAN (Joint Army-Navy) specifications. This guarantees the transistor??s suitability for use in mission-critical systems
