JANS2N3507AU4-Transistor Overview
The JANS2N3507AU4 is a high-reliability PNP bipolar junction transistor (BJT) designed for use in demanding electronic circuits where robustness and performance are critical. This transistor exhibits excellent current amplification and stable operation over a wide temperature range, making it suitable for industrial, aerospace, and military-grade applications. Its hermetically sealed metal can package ensures long-term durability and resistance to environmental stresses. Engineers and sourcing specialists seeking a dependable transistor with proven performance will find this device an optimal choice. For further details, visit the IC Manufacturer website.
JANS2N3507AU4-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 2 A (continuous) |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 40 to 160 (varies with collector current) |
| Transition Frequency (fT) | 3 MHz |
| Junction Temperature (TJ) | -65??C to +200??C |
| Package Type | Hermetic Metal Can (TO-18) |
JANS2N3507AU4-Transistor Key Features
- High collector current capacity: Supports continuous currents up to 2 A, enabling robust power handling in demanding circuit designs.
- Wide operating temperature range: Maintains reliable performance from -65??C to +200??C, suitable for harsh and extreme environments.
- Hermetically sealed metal package: Provides enhanced protection against moisture, contaminants, and mechanical stress, ensuring long-term reliability.
- Stable DC current gain: Offers consistent amplification with hFE ranging from 40 to 160, supporting precise signal control in analog circuits.
Typical Applications
- High-reliability switching in aerospace and military electronic modules, where environmental and operational robustness is mandatory.
- Amplification stages in industrial control systems requiring stable gain and durable device construction.
- Power regulation circuits in instrumentation and measurement equipment demanding high current capacity and thermal stability.
- General-purpose discrete transistor replacement in legacy systems requiring hermetic packaging for extended operational lifespan.
JANS2N3507AU4-Transistor Advantages vs Typical Alternatives
This transistor excels over typical alternatives by combining a hermetic metal can package with a high collector current rating and wide temperature tolerance. These features improve the device??s reliability and environmental resistance, critical for aerospace and industrial applications. Compared to plastic-encapsulated transistors, the metal can design reduces moisture ingress and mechanical failure risk, ensuring superior long-term stability and consistent electrical performance.
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JANS2N3507AU4-Transistor Brand Info
The JANS prefix designates this transistor as a JAN (Joint Army-Navy) qualified device, signifying compliance with military-grade standards for quality and reliability. Manufactured by reputable semiconductor suppliers specializing in defense and aerospace components, this transistor meets stringent screening and production controls. The device is typically sourced from authorized distributors catering to high-reliability sectors. Its design and testing protocols align with MIL-PRF-19500 requirements, making it a trusted component for mission-critical applications.
FAQ
What is the maximum collector current for this transistor?
The transistor supports a maximum continuous collector current of 2 amperes. This capability allows it to handle significant power levels in various applications without degradation, provided thermal limits are observed.
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What package type does this transistor use and why is it important?
It is housed in a herm







