JANS2N3506L-Transistor NPN High-Voltage Amplifier in TO-39 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • It features a voltage rating suitable for robust performance, ensuring stability under demanding conditions.
  • The compact package design allows for board-space savings in dense circuit layouts.
  • Ideal for switching applications in power management, it helps maintain consistent operation in complex systems.
  • Manufactured to meet stringent reliability standards, it supports long-term durability and consistent function.
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JANS2N3506L-Transistor Overview

The JANS2N3506L is a silicon PNP bipolar junction transistor designed for high voltage and medium power amplification applications. It features a complementary structure to the 2N3055 NPN transistor, making it suitable for push-pull amplifier circuits and switching functions. This transistor is characterized by a collector-emitter voltage rating of 60V and a collector current of up to 4A, providing reliable performance in industrial and military environments. Its robust construction ensures stability and efficiency, supporting precise control in analog circuits. For more technical details and sourcing options, visit IC Manufacturer.

JANS2N3506L-Transistor Technical Specifications

Parameter Specification
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 4 A
Power Dissipation (Ptot) 115 W
DC Current Gain (hFE) 20 to 70 (at IC = 2 A)
Transition Frequency (fT) ?? 3 MHz
Package Type TO-3 Metal Can

JANS2N3506L-Transistor Key Features

  • High collector current capacity enables handling of medium power loads with effective thermal management.
  • Wide voltage ratings ensure safe operation in circuits requiring up to 60 V collector-emitter voltage.
  • Robust TO-3 package enhances mechanical durability and thermal dissipation for reliable long-term use.
  • Complementary pairing capability with NPN transistors like 2N3055 facilitates push-pull amplifier designs and balanced switching circuits.

Typical Applications

  • Audio power amplifiers where complementary PNP transistors are required for push-pull output stages, ensuring linear amplification and low distortion.
  • Switching regulators and power management circuits benefiting from its high current and voltage handling capabilities.
  • Industrial control systems requiring rugged transistors for reliable operation under varying load conditions.
  • General-purpose medium power switching and amplification in analog and digital circuits.

JANS2N3506L-Transistor Advantages vs Typical Alternatives

This transistor offers superior collector current and voltage ratings compared to many standard PNP BJTs, enabling use in higher power applications with improved reliability. The TO-3 metal package enhances thermal dissipation, minimizing thermal runaway risks and extending device lifetime. Its complementary design compatibility with popular NPN transistors allows for efficient push-pull amplifier configurations, giving engineers flexibility and precision in circuit design. Overall, it delivers a robust balance of power, durability, and performance in demanding industrial environments.

JANS2N3506L-Transistor Brand Info

The JANS2N3506L is a military-grade transistor variant of the widely recognized 2N3506 PNP transistor family. “JANS” prefix indicates compliance with stringent military and aerospace standards, ensuring enhanced reliability, quality control, and traceability. Manufactured under rigorous testing protocols, this device is commonly supplied by semiconductor manufacturers specializing in defense and industrial sectors. Its TO-3 hermetic metal package reflects traditional robust packaging favored in high-reliability applications where environmental protection and thermal performance are critical.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current rating is 4 amperes. This allows the transistor to handle medium power loads effectively in amplifier and switching applications without risk of damage due to current overload.

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