JANS2N3501UB-Transistor Overview
The JANS2N3501UB transistor is a high-performance PNP bipolar junction transistor designed for reliable operation in industrial and military-grade applications. Featuring robust electrical characteristics, it supports medium power amplification with excellent switching capabilities. This transistor is housed in a hermetically sealed metal can package, ensuring enhanced durability and stability under harsh environmental conditions. Ideal for use in analog circuits, signal amplification, and switching tasks, it offers engineers a dependable solution where long-term reliability and consistent performance are critical. For detailed sourcing and technical support, visit IC Manufacturer.
JANS2N3501UB-Transistor Key Features
- High Voltage Tolerance: Supports collector-emitter voltages up to 60V, enabling operation in diverse power control applications.
- Hermetically Sealed Package: The metal can enclosure ensures superior protection against moisture and contaminants, enhancing operational lifespan.
- Moderate Collector Current Rating: Handles continuous collector current up to 0.8A, allowing efficient medium power amplification.
- Stable Gain Characteristics: Provides consistent DC current gain (hFE) between 40 and 100, critical for precise analog signal processing.
JANS2N3501UB-Transistor Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Type | PNP | Bipolar Junction Transistor | |
| Collector-Emitter Voltage (VCEO) | 60 | V | Maximum voltage between collector and emitter |
| Collector-Base Voltage (VCBO) | 60 | V | Maximum voltage between collector and base |
| Emitter-Base Voltage (VEBO) | 5 | V | Maximum voltage between emitter and base |
| Collector Current (IC) | 0.8 | A | Continuous collector current rating |
| Power Dissipation (Ptot) | 1 | W | Maximum power dissipation |
| DC Current Gain (hFE) | 40-100 | Current gain at specified test conditions | |
| Transition Frequency (fT) | 30 | MHz | Typical cutoff frequency for gain |
| Package | Hermetic Metal Can | Ensures environmental protection and reliability |
JANS2N3501UB-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced reliability through its hermetically sealed metal can package, which is superior to conventional plastic encapsulated devices prone to environmental degradation. Its balanced voltage and current ratings provide stable operation in medium power applications, while the consistent gain ensures precise amplification. Compared to typical alternatives, it delivers improved thermal stability and long-term durability, making it well-suited for critical industrial and military electronics.
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Typical Applications
- Analog signal amplification in industrial control systems, where stable gain and moderate power handling are essential for accurate processing.
- Switching elements in power regulation circuits requiring robust handling of voltage and current within compact footprints.
- Buffer stages in audio and communication equipment that demand low noise and consistent transistor performance.
- Environmental or military electronics where hermetic sealing enhances device longevity and reliability under harsh conditions.
JANS2N3501UB-Transistor Brand Info
The JANS2N3501UB transistor is produced under stringent quality controls to meet military and industrial standards for performance and reliability. This product embodies the legacy of high-grade semiconductor manufacturing, delivering components that withstand demanding operational environments. The brand emphasizes precision engineering and rigorous testing to ensure that each transistor meets or exceeds specifications, providing engineers and sourcing specialists with confidence in system longevity and performance.
FAQ
What is the maximum collector current rating for this transistor?
The device supports a continuous collector current of up to 0.8 amperes, enabling it to handle medium power applications effectively without compromising reliability.
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How does the hermetic metal can package benefit device performance?
The hermetically sealed metal can protects the transistor from moisture, dust, and other environmental factors, significantly enhancing its durability and operational stability over time in challenging conditions.
Is this transistor suitable for high-frequency applications?
With a typical transition frequency around 30 MHz, this transistor is suitable for moderate frequency analog and switching applications but may not be ideal for ultra-high-frequency designs.
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What voltage limits should be observed when using this transistor?
The maximum collector-emitter and collector-base voltages are 60 volts, while the emitter-base voltage limit is 5 volts; respecting these limits prevents electrical overstress and device failure.
Can this transistor be used in military-grade electronics?
Yes, its construction and specifications meet military standards, making it a preferred choice for defense and aerospace applications requiring stringent reliability and performance criteria.
