JANS2N3500L-Transistor NPN High Voltage Amplifier in TO-18 Metal Can Package

  • This transistor controls current flow efficiently, enabling precise switching in electronic circuits.
  • Its high voltage rating ensures stable operation under demanding electrical conditions.
  • The compact package design allows for board-space savings in densely populated assemblies.
  • Ideal for amplification tasks in audio devices, improving signal clarity and performance.
  • Manufactured to meet strict quality standards, ensuring consistent reliability over time.
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JANS2N3500L-Transistor Overview

The JANS2N3500L transistor is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It features robust electrical characteristics suitable for industrial electronics requiring reliable operation under moderate power dissipation and voltage conditions. This transistor is optimized for use in linear and switching circuits, offering dependable gain and stable operation over a wide temperature range. Sourcing specialists and engineers benefit from its standardized JAN military-spec construction, ensuring enhanced ruggedness and long-term reliability. For additional details, refer to the IC Manufacturer resources.

JANS2N3500L-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 90 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 20 to 70 (at IC = 150 mA)
Transition Frequency (fT) 70 MHz (typical)
Operating Junction Temperature -65??C to +200??C

JANS2N3500L-Transistor Key Features

  • High voltage handling: The transistor supports up to 60 V collector-emitter voltage, enabling use in moderately high-voltage switching applications.
  • Robust collector current rating: With a collector current max of 1.5 A, it delivers sufficient power capability for industrial drivers and amplifiers.
  • Wide temperature tolerance: Operating junction temperature up to 200??C ensures reliable performance in harsh or elevated temperature environments.
  • Stable gain range: A DC current gain between 20 and 70 supports consistent amplification across various biasing conditions.

Typical Applications

  • Industrial control and power switching circuits requiring reliable NPN transistors capable of handling moderate voltage and current loads.
  • Audio amplification stages in rugged environments where stable gain and temperature tolerance are critical.
  • Signal processing and driver circuits in military and aerospace electronics due to its JAN specification.
  • General-purpose switching applications in power supplies and relay drivers with emphasis on durability and performance stability.

JANS2N3500L-Transistor Advantages vs Typical Alternatives

This transistor offers a combination of high voltage tolerance, elevated collector current capability, and a wide operating temperature range, making it more reliable than many standard commercial transistors. Its JAN military-grade certification guarantees enhanced ruggedness and long-term stability, providing sourcing specialists and engineers a dependable component option for demanding industrial or aerospace applications where sensitivity and accuracy are crucial.

JANS2N3500L-Transistor Brand Info

The JANS2N3500L is a military-grade transistor variant adhering to the Joint Army-Navy (JAN) standards. It is manufactured under rigorous quality controls to meet MIL-STD-883 testing requirements, ensuring high reliability under extreme conditions. This transistor is typically supplied by established semiconductor manufacturers specializing in military and industrial components, recognized for their consistent quality and compliance with defense sector specifications.

FAQ

What type of transistor is the JANS2N3500L?

The device is an NPN bipolar junction transistor designed for general-purpose amplification and switching. Its construction supports moderate power dissipation and voltage levels, making it suitable for industrial and military applications.

What are the maximum voltage ratings for this transistor?

The maximum collector-emitter voltage is 60 V, collector-base voltage is 90 V, and

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