JANS2N3499L-Transistor NPN High-Power Amplifier in TO-3 Package by JAN

JANS2N3499L-Transistor Overview

The JANS2N3499L transistor is a high-voltage, high-power bipolar junction transistor (BJT) designed for demanding electronic switching and amplification applications. Featuring robust voltage and current handling capabilities, this transistor supports collector-emitter voltages up to 300 V and continuous collector currents of 10 A, making it suitable for industrial and military-grade use. Its sturdy metal can package ensures enhanced thermal dissipation and mechanical reliability. Ideal for applications requiring reliable high-power switching and linear amplification, this transistor is engineered to meet stringent quality and performance standards. For comprehensive sourcing and technical support, visit IC Manufacturer.

JANS2N3499L-Transistor Technical Specifications

JANS2N3499L-Transistor Key Features

• High Voltage Capability: Supports up to 300 V collector-emitter voltage, enabling use in high-voltage switching circuits with excellent reliability.
• High Current Handling: Capable of continuous collector currents up to 10 A, suitable for power amplification and industrial control applications.
• Robust Metal Can Package: Ensures effective thermal management and mechanical durability under harsh operating conditions.
• Wide DC Gain Range: Offers h_FE between 8 and 40, allowing flexible biasing and gain control in amplifier designs.

Typical Applications

• Power amplification in industrial motor control circuits requiring high voltage and current capability for efficient operation.
• Switching regulator stages where high voltage tolerance ensures reliable power conversion and energy efficiency.
• Military and aerospace electronics that demand rugged, high-reliability transistors for critical signal amplification.
• Audio power amplifiers benefiting from the transistor??s wide gain range and power handling for clear signal reproduction.

JANS2N3499L-Transistor Advantages vs Typical Alternatives

This transistor offers a distinct advantage over typical low-voltage or lower-power alternatives by combining a high collector-emitter voltage rating with a substantial continuous collector current capacity. Its hermetically sealed metal can package enhances thermal dissipation and environmental resistance, improving long-term reliability in industrial or military applications. The broad DC current gain range allows for flexible circuit integration, making it a superior choice where both power and precision are critical.

JANS2N3499L-Transistor Brand Info

The JANS2N3499L is a JEDEC-standard military-grade transistor designation, indicating compliance with stringent quality and performance specifications. It is typically manufactured by certified semiconductor suppliers specializing in ruggedized components for aerospace, defense, and industrial sectors. This product is known for its durable metal TO-3 package and robust electrical characteristics, making it a trusted choice for critical high-power electronic designs. The ??JAN?? prefix signifies joint Army-Navy certification, emphasizing its suitability for harsh environments and high-reliability applications.

FAQ

What are the maximum voltage ratings for the JANS2N3499L transistor?

The transistor supports a maximum collector-emitter voltage of 300 V, collector-base voltage of 400 V, and an emitter-base voltage of 7 V. These ratings ensure safe operation in high-voltage circuits without risking breakdown or damage.

What type of package does this transistor use and