JANS2N2907AUB/TR Overview
The JANS2N2907AUB/TR is a high-reliability bipolar junction transistor (BJT) designed for robust switching and amplification in industrial and military-grade applications. Featuring a PNP silicon transistor structure, this device offers dependable performance under demanding environmental conditions. Its complementary design makes it suitable for general-purpose amplification and switching circuits, delivering consistent gain and low noise characteristics. The transistor is housed in a hermetically sealed package to ensure long-term stability and resistance to moisture and contaminants. For sourcing engineers and design specialists seeking trusted semiconductor components, the JANS2N2907AUB/TR provides a proven solution from IC Manufacturer.
JANS2N2907AUB/TR Key Features
- High Current Gain (hFE): Enables efficient signal amplification, reducing the need for additional gain stages in circuits.
- Max Collector-Emitter Voltage (VCEO): Supports up to 60 V, allowing operation in moderately high voltage environments without degradation.
- Hermetically Sealed Package: Enhances device reliability by protecting against moisture, dust, and mechanical stress.
- Military-Grade Qualification: Complies with JAN (Joint Army-Navy) standards ensuring consistent performance in rugged applications.
JANS2N2907AUB/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Silicon Bipolar Junction |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 800 mA (max) |
| Power Dissipation (Ptot) | 625 mW |
| Gain Bandwidth Product (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 40 to 300 |
| Operating Temperature Range | -55??C to +200??C |
| Package Type | Hermetic TO-18 Metal Can |
JANS2N2907AUB/TR Advantages vs Typical Alternatives
The transistor offers superior reliability and environmental resistance compared to standard commercial BJTs, thanks to its hermetically sealed metal can and military-grade certification. This ensures stable gain and switching performance over extended temperature ranges and harsh conditions. Its high current handling and voltage ratings make it well-suited for precision analog and power switching roles where device longevity and consistency are critical. These factors provide sourcing and design engineers with a dependable alternative to typical plastic-encapsulated transistors.
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Typical Applications
- Signal amplification and switching in aerospace and defense systems where military-grade reliability and stable gain are essential for mission-critical electronics.
- Industrial control systems requiring robust transistors capable of handling moderate power loads and elevated temperatures.
- Analog circuit design including preamplifiers and driver stages in instrumentation and measurement equipment.
- General-purpose switching in automotive electronics with enhanced environmental resilience.
JANS2N2907AUB/TR Brand Info
The JANS2N2907AUB/TR is part of the IC Manufacturer??s line of military-qualified discrete semiconductors. Recognized for stringent quality standards, this transistor is built to meet Joint Army-Navy (JAN) specifications, ensuring high reliability in critical applications. The brand emphasizes rigorous testing, hermetic sealing, and stable electrical characteristics over wide temperature ranges. This product is targeted at engineers and procurement specialists requiring proven semiconductor solutions with documented traceability and compliance to defense and industrial standards.
FAQ
What is the maximum collector current rating of the JANS2N2907AUB/TR?
The maximum collector current for this transistor is 800 mA, allowing it to handle medium power loads efficiently. This rating ensures reliable operation in both switching and amplification applications without risk of thermal overload.
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How does the hermetic TO-18 package benefit the transistor??s performance?
The hermetic TO-18 metal can package protects the transistor from moisture, dust, and mechanical stresses, significantly improving its long-term reliability. This packaging is crucial for applications exposed to harsh environments or requiring extended device lifetimes.
What temperature range can the JANS2N2907AUB/TR operate within?
This device supports an operating temperature range from -55??C to +200??C, making it suitable for extreme conditions found in aerospace, military, and industrial environments without degradation in performance.
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Is the gain bandwidth product sufficient for high-frequency applications?
With a typical gain bandwidth product of 100 MHz, this transistor is adequate for many analog and switching applications but may not be optimized for very high-frequency RF circuits. It balances frequency response with high reliability.
What standards does this transistor comply with?
The device meets the Joint Army-Navy (JAN) military specifications, ensuring it undergoes rigorous screening and quality assurance for use in mission-critical defense and aerospace applications.
