JANS2N2907AUA-Transistor PNP Bipolar Junction Transistor in TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling efficient control in various circuits.
  • Its gain ensures stable signal amplification, crucial for maintaining consistent performance in designs.
  • The compact package supports board-space savings, facilitating integration into dense or portable devices.
  • Ideal for use in switching applications, it enhances response times and power management in electronic systems.
  • Manufactured to meet rigorous quality standards, it offers dependable operation under diverse environmental conditions.
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JANS2N2907AUA-Transistor Overview

The JANS2N2907AUA is a high-reliability PNP bipolar junction transistor (BJT) designed for military and aerospace applications requiring stringent quality and performance standards. This transistor offers robust electrical characteristics including a maximum collector current of 600 mA and a collector-emitter voltage rating of 60 V, ensuring reliable switching and amplification in demanding environments. Packaged in a hermetically sealed TO-18 metal can, it provides excellent thermal stability and protection against environmental factors. The device is fully compliant with JAN standards for ruggedness and long-term reliability, making it ideal for critical industrial and defense electronics. For more detailed sourcing and technical support, visit IC Manufacturer.

JANS2N2907AUA-Transistor Technical Specifications

Parameter Value Units
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (PD) 625 mW
DC Current Gain (hFE) 40 to 300
Transition Frequency (fT) 100 MHz
Operating Temperature Range -65 to +200 ??C
Package Type TO-18 Metal Can

JANS2N2907AUA-Transistor Key Features

  • Military-Grade Reliability: Certified to JAN standards, ensuring robust operation in harsh environments and extended lifecycle for critical applications.
  • Wide Voltage and Current Ratings: Supports up to 60 V collector-emitter voltage and 600 mA collector current, enabling versatile use in amplification and switching circuits.
  • High Transition Frequency: Capable of operating at up to 100 MHz, suitable for high-speed switching and RF applications requiring fast response times.
  • Hermetically Sealed TO-18 Package: Provides superior protection against moisture, contaminants, and mechanical stress, enhancing long-term stability.
  • Wide Operating Temperature Range: Functional from -65 ??C to +200 ??C, making it ideal for aerospace and industrial environments with extreme temperature variations.

Typical Applications

  • Military and aerospace electronic circuits requiring dependable PNP transistor amplification and switching with high reliability under extreme conditions.
  • Industrial control systems where rugged transistor performance and temperature tolerance are critical for long-term operation.
  • High-frequency signal amplification and switching in communication equipment benefiting from the transistor??s 100 MHz transition frequency.
  • Power management circuits that demand stable and efficient transistor operation at moderate power dissipation levels.

JANS2N2907AUA-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and environmental resistance compared to standard commercial PNP devices, thanks to its JAN certification and hermetic packaging. Its wide operating temperature range and high transition frequency provide enhanced performance for high-speed, high-temperature applications. The combination of robust voltage/current ratings and military-grade standards makes it a preferred choice for mission-critical systems requiring consistent, long-term operation with minimal failure risk.

JANS2N2907AUA-Transistor Brand Info

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