JANS2N2907A-Transistor Overview
The JANS2N2907A is a high-reliability PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This transistor features a complementary design optimized for linear and switching performance with a maximum collector current of 600 mA and a collector-emitter voltage rating of 60 V. Its robust construction meets military and aerospace standards, ensuring durability in demanding environments. Ideal for engineers and sourcing specialists requiring a dependable component, this transistor offers consistent gain and fast switching speeds. For more detailed technical and sourcing information, visit IC Manufacturer.
JANS2N2907A-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | PNP Bipolar Junction |
| Collector-Emitter Voltage (V_CEO) | 60 V |
| Collector-Base Voltage (V_CBO) | 60 V |
| Emitter-Base Voltage (V_EBO) | 5 V |
| Collector Current (I_C) | 600 mA |
| DC Current Gain (h_FE) | 100 (typical at I_C = 150 mA) |
| Power Dissipation (P_D) | 625 mW (at 25??C) |
| Transition Frequency (f_T) | 100 MHz (typical) |
| Package Type | TO-18 Metal Can |
| Operating Junction Temperature | -65??C to +200??C |
JANS2N2907A-Transistor Key Features
- High voltage and current handling: Supports up to 60 V and 600 mA, enabling robust switching and amplification in moderate power circuits.
- Wide operating temperature range: Rated for -65??C to +200??C, ensuring reliable performance in harsh industrial and aerospace environments.
- Consistent gain characteristics: Typical DC gain of 100 provides predictable amplification, essential for precision analog circuits.
- Hermetically sealed TO-18 package: Enhances device reliability and long-term stability by protecting the transistor from environmental contaminants.
Typical Applications
- Signal amplification in audio and instrumentation circuits where stable gain and moderate power handling are required.
- Switching applications in low to medium power control circuits, including relay drivers and logic interface stages.
- Military and aerospace electronic systems demanding high reliability under extreme temperature and environmental conditions.
- General-purpose analog and digital circuits needing a robust PNP transistor with proven long-term stability.
JANS2N2907A-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and environmental resistance compared to standard commercial transistors, making it ideal for critical applications. Its hermetic TO-18 packaging and extended temperature rating provide enhanced durability versus plastic-encapsulated devices. With a balanced combination of voltage, current, and gain characteristics, it ensures consistent performance where sensitivity and accuracy are essential. These features make it a preferred choice over typical alternatives lacking rigorous screening and industrial-grade packaging.
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JANS2N2907A-Transistor Brand Info
The JANS2N2907A transistor is part of a series historically manufactured to military standards, often associated with reputable semiconductor suppliers specializing in high-reliability components. The “JAN” prefix indicates Joint Army-Navy specifications, signaling stringent quality control and qualification for aerospace and defense use. This product is typically sourced from established semiconductor manufacturers that comply with MIL-PRF-19500 certification, ensuring high performance and ruggedness for mission-critical applications.
FAQ
What type of transistor is the JANS2N2907A, and what are its polarity and function?
The device is a PNP bipolar junction transistor (BJT). It functions as a general-purpose amplifier and switch, capable of controlling current flow in circuits by using the base-emitter junction to modulate collector current.
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What are the maximum voltage and current ratings of this transistor?
The transistor can handle a maximum collector-emitter voltage of 60 V and a continuous collector current up to 600 mA, making it suitable for moderate power applications.
