The JANS2N2906AUA is a high-reliability, NPN bipolar junction transistor designed for military and aerospace applications requiring stringent quality and performance standards. This transistor features robust electrical characteristics with a maximum collector current of 600 mA and a collector-emitter voltage rating of 40 V, making it suitable for switching and amplification tasks in demanding environments. Its hermetic metal-can package ensures durability and long-term stability under harsh conditions. Engineers and sourcing specialists looking for a dependable transistor with proven reliability will find this device a solid choice. Additional technical details and sourcing options are available from the IC Manufacturer.
JANS2N2906AUA-Transistor Technical Specifications
Parameter
Specification
Unit
Transistor Type
PNP Bipolar Junction
?C
Collector-Emitter Voltage (VCEO)
40
Volts
Collector-Base Voltage (VCBO)
60
Volts
Emitter-Base Voltage (VEBO)
5
Volts
Collector Current (IC)
600
mA
Power Dissipation (PD)
800
mW
Current Gain (hFE)
100 minimum
?C
Transition Frequency (fT)
100
MHz
Package Type
Hermetic Metal Can (TO-18)
?C
JANS2N2906AUA-Transistor Key Features
High collector current capability: Supports up to 600 mA, enabling robust switching and amplification in power-demanding circuits.
Wide voltage ratings: Collector-emitter voltage of 40 V ensures reliable operation in various industrial and aerospace environments.
Hermetic metal-can packaging: Provides superior protection against moisture and contaminants, enhancing long-term reliability.
Consistent current gain: A minimum hFE of 100 ensures predictable amplification performance, critical for precision analog applications.
Typical Applications
Military and aerospace switching circuits requiring high reliability and stable performance under extreme conditions.
Signal amplification in analog and digital control systems where consistent gain and low noise are essential.
Industrial control systems that demand rugged transistor components capable of operating under thermal and mechanical stress.
Power regulation circuits in communication and instrumentation devices requiring durable semiconductor components.
JANS2N2906AUA-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced reliability and robust electrical performance compared to standard commercial-grade devices. Its hermetic metal-can package improves resistance to environmental factors, which is critical in aerospace and military applications. The combination of a high current rating and consistent gain makes it an excellent choice where precise amplification and switching are required. These advantages translate into greater system stability, reduced failure rates, and improved lifecycle costs versus typical plastic-encapsulated transistors.
The JANS2N2906AUA is produced under stringent military specifications, commonly associated with manufacturers specializing in high-reliability semiconductors such as ON Semiconductor, Vishay, or Texas Instruments. The JANS prefix denotes compliance with Joint Army-Navy Standards, indicating ruggedness and quality control tailored for defense and aerospace sectors. This transistor is built to meet strict screening and testing protocols, ensuring it performs reliably in critical applications where failure is not an option.
