JANS2N2906AL-Transistor Overview
The JANS2N2906AL-Transistor is a high-quality PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Engineered to meet military specifications, it offers reliable performance under demanding conditions, including elevated temperatures and mechanical stress. This transistor is optimized for medium power and voltage handling with robust current gain, making it suitable for rugged industrial environments. Its complementary configuration to the 2N2222 NPN transistor enhances versatility in circuit design. Available through IC Manufacturer, the device is ideal for engineers and sourcing specialists seeking consistent, military-grade transistor solutions.
JANS2N2906AL-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (Vceo) | -40 V |
| Collector Current (Ic) | -600 mA |
| Power Dissipation (Ptot) | 625 mW |
| DC Current Gain (hFE) | 100 to 300 (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Operating Temperature Range | -55??C to +200??C |
| Package Type | TO-18 Metal Can |
JANS2N2906AL-Transistor Key Features
- Military-Grade Reliability: Qualified to JANS standards, ensuring exceptional durability and performance in harsh environments for mission-critical applications.
- Medium Power Handling: Supports collector currents up to 600mA and voltage ratings up to 40V, enabling effective amplification and switching in industrial circuits.
- Wide Operating Temperature Range: Functional from -55??C to +200??C, suitable for aerospace, defense, and high-temperature electronics.
- High Gain and Frequency Response: Typical current gain of 100?C300 and transition frequency around 100 MHz, allowing efficient signal amplification and fast switching.
Typical Applications
- Amplification stages in analog signal processing, where stable gain and temperature resilience are critical for performance consistency.
- Switching devices in industrial control systems requiring robust, reliable transistor operation under variable loads.
- Complementary transistor pairs in push-pull amplifier circuits for audio and RF applications.
- Military and aerospace electronics demanding components that comply with stringent quality and environmental standards.
JANS2N2906AL-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and temperature tolerance compared to standard commercial-grade BJTs. Its military specification qualification ensures enhanced durability and consistent electrical characteristics, which are crucial for sensitive and mission-critical systems. The metal TO-18 package provides better thermal dissipation and mechanical protection than plastic alternatives, making it a preferred choice where long-term stability and robustness are essential.
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JANS2N2906AL-Transistor Brand Info
The JANS2N2906AL designation identifies a military-grade variant of the well-known 2N2906 PNP transistor, historically supplied by premier semiconductor manufacturers specializing in defense and aerospace components. This transistor is manufactured to meet rigorous JANS (Joint Army-Navy Specification) standards, ensuring high reliability and performance in extreme environments. Typically sourced from legacy semiconductor manufacturers or authorized distributors, the device reflects a commitment to quality and traceability demanded by government and industrial users. It remains a trusted choice for engineers requiring dependable, high-performance discrete transistor solutions within legacy and new design frameworks.
FAQ
What does the ‘JANS’ prefix in JANS2N2906AL indicate?
The ‘JANS’ prefix designates that the transistor meets Joint Army-Navy Specifications for military-grade components. This means it has undergone rigorous testing for reliability, environmental resistance, and electrical performance suitable for defense and aerospace applications.
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What are the typical operating voltage and current limits for this transistor?
This PNP transistor supports a maximum collector-emitter voltage of -40 volts and a continuous collector current up to -600 milliamps, making it suitable for medium power applications requiring moderate voltage and current handling capability.






