JANS2N2904AL-Transistor NPN Amplifier Silicon Transistor in TO-18 Metal Can Package

  • This transistor amplifies low-level signals, enabling efficient switching and control in electronic circuits.
  • Its configuration supports stable operation, ensuring consistent performance under varying electrical conditions.
  • Encased in a compact package, it saves board space while maintaining effective heat dissipation.
  • Ideal for use in signal amplification within communication devices, enhancing clarity and response times.
  • Manufactured to meet stringent quality standards, it offers dependable long-term functionality in diverse environments.
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JANS2N2904AL-Transistor Overview

The JANS2N2904AL transistor is a robust NPN bipolar junction transistor designed for switching and amplification applications in industrial and military-grade electronics. It operates reliably under rigorous conditions with a maximum collector current rating of 600mA and a collector-emitter voltage of 40V. Known for its high gain and low noise characteristics, this device suits precision analog circuits and general-purpose amplification needs. The hermetically sealed metal can package ensures enhanced thermal stability and long-term reliability. For sourcing and integration, the transistor offers a balance of performance and ruggedness suitable for demanding environments. More details are available at IC Manufacturer.

JANS2N2904AL-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 40 to 300
Transition Frequency (fT) 100 MHz
Package Type Hermetically Sealed Metal Can (TO-18)

JANS2N2904AL-Transistor Key Features

  • High Current Capability: Supports collector currents up to 600mA, enabling effective driving of moderate power loads and switching applications.
  • Wide Voltage Ratings: With a collector-emitter voltage up to 40V and collector-base voltage of 60V, it is suited for a range of low to medium voltage circuits.
  • Hermetic Metal Can Packaging: Provides excellent thermal dissipation and environmental protection, enhancing device reliability in harsh conditions.
  • High Gain Range (hFE): Offers a broad current gain range from 40 to 300, allowing flexibility for analog amplification and signal processing.
  • High Transition Frequency (fT): Operating at 100MHz, the transistor supports high-speed switching and RF applications.
  • Low Noise Characteristics: Suitable for sensitive analog circuits, reducing signal distortion and improving overall system performance.

Typical Applications

  • Signal Amplification: Ideal for general-purpose amplifier circuits in industrial instrumentation and communication equipment due to its stable gain and low noise.
  • Switching Circuits: Can be used efficiently in relay drivers, lamp drivers, and low power switching applications requiring reliable current handling.
  • Audio Preamplifiers: The transistor??s linearity and gain make it suitable for audio amplification stages in consumer and professional audio devices.
  • High-Frequency Oscillators: Its 100MHz transition frequency enables use in RF oscillators and frequency mixers within communication systems.

JANS2N2904AL-Transistor Advantages vs Typical Alternatives

This transistor stands out against typical alternatives due to its hermetic metal can packaging, which significantly improves thermal management and long-term reliability in demanding environments. Its broad voltage and current ratings, combined with a high transition frequency, provide versatility for switching and amplification tasks. The wide gain range ensures adaptability in precise analog circuits, making it a dependable choice for industrial and military applications requiring ruggedness and performance.

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