JANS2N2904A-Transistor Overview
The JANS2N2904A transistor is a high-quality, silicon NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Manufactured under stringent military standards, it ensures enhanced reliability and consistent electrical performance in demanding environments. This device offers moderate power handling capability, a maximum collector current of 600mA, and a voltage rating up to 60V, making it suitable for a broad range of industrial and commercial electronics. The transistor??s robust construction guarantees stable operation across various temperatures and electrical loads, making it an excellent choice for engineers requiring dependable, long-lasting components. For detailed sourcing and technical support, visit IC Manufacturer.
JANS2N2904A-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector-Base Voltage (Vcbo) | 60 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 600 mA |
| Power Dissipation (Ptot) | 625 mW |
| DC Current Gain (hFE) | 100 to 300 (varies by collector current) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 metal can |
JANS2N2904A-Transistor Key Features
- Military-grade construction: Ensures rigorous quality control and reliability for mission-critical applications.
- Moderate voltage and current ratings: Supports up to 60V collector-emitter voltage and 600mA collector current for versatile circuit integration.
- High DC current gain: Provides efficient amplification with gain values typically ranging from 100 to 300, optimizing signal strength in analog circuits.
- High transition frequency: Operating up to 100 MHz supports moderate frequency switching and amplification tasks.
- Durable TO-18 metal can package: Offers enhanced thermal dissipation and mechanical stability compared to plastic packages.
Typical Applications
- Signal amplification in analog communication equipment where dependable gain and linearity are essential for performance.
- Switching applications in control circuits requiring reliable transistor operation under varying loads and voltages.
- Low to medium power driver stages in consumer and industrial electronic devices.
- General-purpose transistor circuits needing military-grade reliability and consistent electrical characteristics.
JANS2N2904A-Transistor Advantages vs Typical Alternatives
This transistor stands out for its military-grade qualification, which ensures higher reliability and tighter parameter tolerances compared to commercial-grade alternatives. Its moderate voltage and current ratings paired with a robust metal can package provide stable operation under thermal and mechanical stress. The high DC gain and transition frequency enable efficient amplification and switching, making it a versatile choice for applications demanding accuracy, durability, and consistent performance.
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JANS2N2904A-Transistor Brand Info
The JANS2N2904A is a military specification variant of the widely used 2N2904 transistor, commonly manufactured by reputable semiconductor suppliers specializing in defense and aerospace components. The ??JAN?? prefix indicates compliance with Joint Army-Navy (JAN) standards, certifying the transistor for use in harsh environmental conditions and critical systems. This ensures that each device undergoes rigorous testing for parameters such as temperature range, vibration, and electrical stability. The transistor is packaged in a TO-18 hermetically sealed metal can, enhancing durability and long-term reliability. These attributes make the device a trusted component in military, aviation, and high-reliability industrial electronics.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current is 600mA, which defines the highest continuous current the transistor can safely conduct through its collector terminal without damage.
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Can this transistor operate at high frequencies?
Yes, the device has a typical transition frequency (fT) of around 100 MHz, making it suitable for moderate frequency amplification and switching applications.
