JANS2N2484-Transistor by JAN | High-Performance NPN Transistor | TO-39 Package

  • Operates as a bipolar junction transistor, enabling efficient signal amplification and switching tasks in circuits.
  • Features a voltage rating suitable for moderate power applications, ensuring stable performance under typical loads.
  • The transistor??s package design offers a compact footprint, aiding in board-space optimization for dense layouts.
  • Ideal for use in audio amplification or switching circuits, enhancing overall device responsiveness and control.
  • Manufactured to meet stringent military standards, providing enhanced reliability in demanding environments.
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JANS2N2484-Transistor Overview

The JANS2N2484 transistor is a high-performance NPN bipolar junction transistor designed for precision switching and amplification in industrial electronics. Known for its robust construction and reliable performance under demanding conditions, it features a collector-emitter voltage rating of 100 V and a collector current capability up to 1 A. The device exhibits low saturation voltage and high gain bandwidth, making it suitable for high-frequency applications and linear amplification. With its rugged JAN (Joint Army-Navy) military specification package, this transistor ensures dependable operation in harsh environments. For sourcing and detailed technical support, visit IC Manufacturer.

JANS2N2484-Transistor Key Features

  • High voltage tolerance: With a collector-emitter voltage (Vceo) of 100 V, it supports circuits requiring robust voltage handling.
  • Substantial current capacity: The 1 A collector current rating enables efficient power switching and amplification in moderate load conditions.
  • Low saturation voltage: Enhances power efficiency by minimizing voltage drop during conduction, reducing heat dissipation.
  • Wide gain bandwidth product: Suitable for high-frequency amplification, ensuring fast switching and signal integrity in RF and analog circuits.
  • JAN hermetic metal can package: Provides superior mechanical protection and thermal conduction, improving reliability in industrial and military applications.
  • Stable gain characteristics: Ensures predictable transistor performance across temperature variations, aiding circuit stability.
  • Low noise figure: Ideal for sensitive amplification circuits where signal clarity is critical.

JANS2N2484-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 100 V
Collector-Base Voltage (Vcbo) 100 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 1 A
Power Dissipation (Ptot) 1.2 W (typical)
Gain Bandwidth Product (fT) 100 MHz (typical)
DC Current Gain (hFE) 40 to 300
Package Type Hermetic Metal Can (TO-18)
Operating Temperature Range -65??C to +200??C

JANS2N2484-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to standard commercial-grade devices, making it ideal for demanding industrial and military applications. Its hermetic metal package enhances reliability in harsh environments, outperforming plastic-encapsulated alternatives. The wide gain bandwidth and low noise characteristics provide precise switching and amplification, ensuring better signal fidelity and efficiency in high-frequency circuits.

Typical Applications

  • High-frequency amplification in RF communication systems, leveraging the transistor??s wide gain bandwidth and low noise figure for clear signal processing.
  • Switching operations in power control circuits that require robust voltage and current ratings for reliable performance.
  • Industrial instrumentation and sensor interface circuits where stable gain and low distortion are critical for accurate measurements.
  • Military and aerospace electronics benefiting from the rugged hermetic packaging and extended temperature range for dependable operation under extreme conditions.

JANS2N2484-Transistor Brand Info

The JANS2N2484 transistor is produced under strict military standards, denoted by the JANS prefix indicating Joint Army-Navy certification. This ensures the component meets rigorous quality, reliability, and environmental testing criteria. The brand emphasizes durability and consistent performance, making it a preferred choice for defense contractors and aerospace engineers. Its hermetic metal can packaging further assures long-term stability and resistance to moisture and mechanical stress, characteristic of products designed for mission-critical applications.

FAQ

What type of transistor is the JANS2N2484 and what are its primary characteristics?

The device is an NPN bipolar junction transistor designed for switching and amplification. It features a maximum collector-emitter voltage of 100 V, collector current up to 1 A, and a gain bandwidth product around 100 MHz, making it suitable for high-frequency and moderate power applications.

What are the packaging benefits of the JANS2N2484 transistor?

This transistor uses a hermetic metal can (TO-18) package, which provides excellent mechanical protection and superior thermal conduction. This packaging type ensures reliability in harsh environments, with resistance to moisture, vibration, and temperature extremes.

In what temperature range can the transistor reliably operate?

The JANS2N2484 is rated for operation from -65??C up to +200??C, allowing it to function reliably in extreme industrial and military conditions without degradation in performance.

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How does the transistor??s gain bandwidth product affect its applications?

The gain bandwidth product of approximately 100 MHz enables the transistor to operate effectively in high-frequency circuits, such as RF amplifiers and fast switching applications, ensuring signal integrity and responsiveness in demanding environments.

What are typical use cases for this transistor in industrial and military electronics?

Typical applications include RF communication amplifiers, power switching in control systems, industrial instrumentation requiring precise signal amplification, and military/aerospace electronics where ruggedness and reliability are paramount.

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