JANS2N2369AUB-Transistor Overview
The JANS2N2369AUB is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications in industrial and military environments. Featuring a robust metal can package and screening to JAN (Joint Army-Navy) standards, this transistor offers superior reliability under harsh conditions. Its low noise and high gain characteristics make it suitable for low-level audio frequency applications and signal processing. Engineered for precise switching and amplification, the device supports moderate voltage and current requirements, ensuring stable operation in demanding circuits. Available through IC Manufacturer, it is a trusted choice for engineers seeking a rugged, dependable transistor solution.
JANS2N2369AUB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 0.8 A (max) |
| Power Dissipation (Ptot) | 0.8 W |
| Transition Frequency (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 70 to 300 |
| Package Type | TO-18 Metal Can |
JANS2N2369AUB-Transistor Key Features
- High gain and low noise: Enables precise amplification of low-level signals, critical for audio and sensor applications.
- JAN screening for military-grade reliability: Ensures stable performance under extreme environmental and electrical stress.
- Compact TO-18 metal can package: Offers excellent thermal conductivity and mechanical durability for long-term operation.
- Moderate collector current and voltage ratings: Suitable for a wide range of general-purpose switching and amplification tasks.
Typical Applications
- Low-noise preamplifiers in communication and audio circuits, where signal integrity is paramount.
- Signal switching in industrial control systems requiring rugged, reliable transistors.
- General-purpose amplification in instrumentation and sensor interface modules.
- Military and aerospace electronic assemblies demanding JAN-qualified components for enhanced durability.
JANS2N2369AUB-Transistor Advantages vs Typical Alternatives
This transistor excels compared to standard commercial devices by offering JAN military screening, which guarantees superior reliability and consistency in harsh operating environments. Its balanced combination of voltage, current, and gain characteristics makes it a versatile choice for engineers requiring dependable performance. The metal can package enhances thermal management and mechanical strength, providing an edge over plastic-encapsulated alternatives. Overall, it delivers enhanced sensitivity and stability, critical for precision electronic applications.
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JANS2N2369AUB-Transistor Brand Info
The JANS2N2369AUB transistor is a military-grade variant of the popular 2N2369 transistor originally developed and standardized by JEDEC. The JAN prefix indicates compliance with the Joint Army-Navy specification, reflecting stringent screening processes for quality and reliability. Manufactured by multiple trusted semiconductor suppliers, this device is widely recognized in aerospace, defense, and industrial sectors. Its provenance and testing standards ensure compatibility with legacy and modern systems requiring rugged transistor components.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current rating for the transistor is 0.8 amperes. This limit must be observed to prevent thermal damage and ensure reliable operation within specified power dissipation limits.
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How does the JAN screening affect transistor reliability?
JAN screening involves rigorous testing procedures including temperature cycling, burn-in, and electrical stress tests. This






