JANS2N2369AUA-Transistor NPN Amplifier, High-Speed Switching, TO-18 Metal Can Package

JANS2N2369AUA-Transistor Overview

The JANS2N2369AUA transistor is a high-performance NPN bipolar junction transistor (BJT) designed for industrial and military applications requiring reliability and consistent switching performance. Engineered to operate efficiently at high frequencies, this transistor supports moderate power amplification and switching tasks with low noise generation. Its robust construction adheres to stringent quality standards, ensuring durability in demanding environments. Ideal for engineers and sourcing specialists, this transistor offers a balance of gain, voltage rating, and current capacity suitable for signal amplification and switching circuits. For more detailed product insights, visit IC Manufacturer.

JANS2N2369AUA-Transistor Technical Specifications

JANS2N2369AUA-Transistor Key Features

• High-frequency operation: With a gain bandwidth product of 100 MHz, it enables effective amplification in RF and high-speed switching circuits.
• Robust voltage rating: Supports up to 30 V collector-emitter voltage, providing ample headroom for moderate power applications.
• Reliable current handling: Continuous collector current up to 0.8 A ensures dependable performance in signal switching and amplification tasks.
• Metal can package: The TO-18 hermetic enclosure offers enhanced thermal dissipation and mechanical durability, critical for industrial environments.

Typical Applications

• Signal amplification in industrial control systems requiring stable gain and low noise at moderate frequencies.
• Switching elements in power management circuits in aerospace and defense electronics.
• RF amplification stages in communication devices operating within VHF frequency bands.
• General-purpose transistor use in military-grade and high-reliability equipment.

JANS2N2369AUA-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability and consistent high-frequency performance compared to standard small-signal BJTs. Its metal can packaging improves thermal management, reducing failure rates under harsh conditions. The wide gain range and sufficient collector current rating provide engineers with flexible design options, making it advantageous for applications demanding precision, durability, and stable operation over typical plastic-packaged transistors.

JANS2N2369AUA-Transistor Brand Info

The JANS2N2369AUA is a military-grade variant of the widely recognized 2N2369 transistor series, manufactured under rigorous quality standards to meet MIL-STD requirements. It is typically supplied by authorized semiconductor manufacturers specializing in high-reliability discrete devices designed for aerospace, defense, and industrial markets. The JANS prefix indicates a JAN (Joint Army-Navy) screening process, ensuring extended temperature ranges, hermetic sealing, and stringent electrical parameter testing for mission-critical applications.

FAQ

What is the maximum operating voltage for this transistor?

The maximum collector-emitter voltage for this transistor is 30 volts, which allows it to handle moderate voltage levels typical in signal amplification and switching circuits without risk of breakdown.

How does the gain bandwidth product affect transistor performance?

The gain bandwidth product of 100 MHz means the transistor can effectively amplify signals up to this frequency range, making it suitable for high-speed switching and RF applications where fast response and low distortion are essential.

What type of package does this transistor use and why is it important?

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