JANS2N2369AU-Transistor High-Speed NPN Amplifier Transistor in TO-18 Metal Can Package

JANS2N2369AU-Transistor Overview

The JANS2N2369AU is a high-performance NPN bipolar junction transistor designed for low-noise and high-frequency amplification applications. Engineered for military and aerospace environments, this transistor offers robust electrical characteristics combined with stringent quality standards. Its complementary balance of voltage, current, and gain parameters makes it ideal for signal amplification and switching in demanding industrial and defense electronics. The device is compliant with JAN (Joint Army-Navy) specifications, ensuring superior reliability under harsh conditions. For detailed sourcing and technical support, visit IC Manufacturer.

JANS2N2369AU-Transistor Technical Specifications

JANS2N2369AU-Transistor Key Features

• High transition frequency: Enables efficient operation in RF amplification circuits up to 100 MHz, enhancing signal integrity in communication systems.
• Robust collector current handling: Supports continuous collector currents up to 0.8 A, suitable for moderate power amplification and switching tasks.
• Wide operating temperature range: Ensures reliable performance from -55??C to +125??C, critical for aerospace and military electronics exposed to extreme environments.
• JAN quality standard compliance: Meets stringent military-grade testing for durability and stability, providing confidence in long-term operational reliability.

Typical Applications

• Low-noise RF amplifier stages in communication and radar systems where signal clarity and high-frequency response are vital.
• Switching devices in industrial control circuits requiring moderate power and fast switching capability.
• Signal amplification in instrumentation and sensor interface circuits demanding precise gain and low distortion.
• General purpose amplification and switching in harsh environments such as aerospace and defense electronic subsystems.

JANS2N2369AU-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high frequency response and collector current capacity while complying with rigorous JAN military standards. Compared to common commercial-grade transistors, it delivers enhanced reliability, stable gain across temperature extremes, and robust packaging. These attributes make it particularly advantageous for applications requiring dependable performance in challenging environments, ensuring reduced failure rates and consistent signal amplification.

JANS2N2369AU-Transistor Brand Info

The JANS2N2369AU is a military-specification transistor variant of the popular 2N2369 series, historically produced by leading semiconductor manufacturers adhering to Joint Army-Navy (JAN) standards. This brand lineage emphasizes quality control and reliability for defense and aerospace sectors. Devices under this designation are typically manufactured using hermetically sealed metal can packages (TO-18) to withstand mechanical and environmental stresses. The JANS prefix signifies compliance with strict government testing protocols, ensuring suitability for mission-critical electronic systems.

FAQ

What is the maximum collector current rating for the JANS2N2369AU transistor?

The maximum continuous collector current for this transistor is 0.8 amperes. Operating within this limit ensures the device functions reliably without exceeding its thermal and electrical ratings.

Can the transistor operate effectively at high frequencies?

Yes, the device is designed for high-frequency applications with a transition frequency (f_T) of approximately 100 MHz, making it suitable for RF amplification and other high-speed switching tasks.

What temperature range can this transistor reliably operate in?

This transistor supports a wide operating temperature range from -55??C up to +125??C, allowing it to perform