JANS2N2221UB-Transistor Overview
The JANS2N2221UB transistor is a high-reliability, NPN bipolar junction transistor designed for switching and amplification in industrial and military-grade applications. It features a robust construction that meets stringent JEDEC standards, ensuring consistent performance under demanding environmental conditions. This transistor provides dependable gain characteristics and low noise, making it suitable for precision analog circuits and general-purpose switching tasks. Sourced through IC Manufacturer, the device is optimized for durability and long-term stability, addressing the needs of engineers and sourcing specialists in aerospace, defense, and other critical sectors.
JANS2N2221UB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 600 mA |
| Power Dissipation (PD) | 800 mW |
| DC Current Gain (hFE) | 100 to 300 (typical) |
| Transition Frequency (fT) | 300 MHz (typical) |
| Operating Temperature Range | -55??C to +200??C |
| Package Type | TO-18 Metal Can |
JANS2N2221UB-Transistor Key Features
- High Voltage Handling: Supports collector-emitter voltages up to 40 V, enabling reliable operation in medium-voltage switching circuits.
- Robust Current Capacity: Handles up to 600 mA continuous collector current, suitable for moderate load driving without performance degradation.
- Wide Temperature Range: Operates effectively from -55??C to +200??C, ensuring stability in harsh industrial and aerospace environments.
- Low Noise Performance: Ideal for amplification stages requiring minimal signal distortion, improving overall circuit fidelity.
- JEDEC Qualified Metal Can Package: Offers enhanced thermal dissipation and mechanical protection for high-reliability applications.
Typical Applications
- Switching and amplification in aerospace and military electronic systems requiring high reliability and temperature tolerance.
- Signal amplification in industrial instrumentation and control equipment where noise minimization is critical.
- Driver stages for relays, solenoids, and low-power motors in rugged environments.
- General-purpose switching in embedded systems and power management circuits within harsh operating conditions.
JANS2N2221UB-Transistor Advantages vs Typical Alternatives
This transistor delivers superior reliability and extended temperature range compared to standard commercial equivalents. Its metal can packaging enhances thermal management and mechanical durability, making it preferred for mission-critical applications. Additionally, the robust current handling and low noise characteristics provide engineers with a versatile component that balances performance and endurance, supporting sensitive and precise industrial designs more effectively than common plastic-encapsulated transistors.
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JANS2N2221UB-Transistor Brand Info
The JANS2N2221UB is a JEDEC-standardized transistor designation typically manufactured under military and aerospace-grade quality controls. It is often supplied by trusted semiconductor manufacturers specializing in high-reliability discrete components. The ??JAN?? prefix indicates compliance with Joint Army-Navy standards, ensuring rigorous testing for temperature extremes, mechanical stress, and electrical parameters. This product is favored in sectors where failure is not an option, such as defense electronics, avionics, and critical industrial systems. Its legacy and ongoing production reflect a commitment to performance consistency and availability for demanding engineering applications.
FAQ
What distinguishes the JANS2N2221UB from standard 2N2221 transistors?
The JANS2N2221UB variant is built to meet military-grade standards, featuring a more robust metal can package and extended temperature ratings. This ensures higher reliability and durability under harsh conditions compared to standard commercial 2N2221 transistors, which typically come in plastic packages with narrower temperature ranges.
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Is the transistor suitable for high-frequency applications?
Yes, with a transition frequency (fT) of approximately 300 MHz, this transistor supports moderate high-frequency operation, making it suitable for RF amplification and switching tasks






