JANS2N2221UA-Transistor Overview
The JANS2N2221UA transistor is a military-grade NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It offers robust performance in demanding environments, featuring low noise and high gain characteristics. This transistor is well-suited for use in rugged industrial and aerospace systems requiring reliability and consistency under stress. With a collector current capacity up to 800mA and a maximum collector-emitter voltage of 40V, it supports medium-power applications effectively. Its hermetic metal can package enhances durability and thermal management, making it a preferred choice in precision analog circuits and switching tasks. Available through IC Manufacturer, it meets stringent military specifications ensuring long-term operational stability.
JANS2N2221UA-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Bipolar Junction |
| Maximum Collector-Emitter Voltage (VCEO) | 40 V |
| Maximum Collector Current (IC) | 800 mA |
| Power Dissipation (Ptot) | 625 mW |
| Transition Frequency (fT) | 250 MHz (typical) |
| Gain Bandwidth Product | High gain suitable for low noise amplification |
| Package Type | Hermetic Metal Can (TO-18) |
| Operating Temperature Range | -55??C to +125??C |
| Noise Figure | Low noise figure optimized for analog circuits |
JANS2N2221UA-Transistor Key Features
- Military-Grade Reliability: Built to meet strict military standards, ensuring consistent performance in harsh environments.
- High Collector Current Capacity: Supports up to 800mA, enabling effective medium-power switching and amplification tasks.
- Low Noise Performance: Optimized for analog signal amplification with minimal noise interference, critical for precision electronics.
- Hermetic Metal Can Packaging: Provides superior thermal conduction and environmental protection, enhancing long-term reliability.
Typical Applications
- General-purpose amplification in military communication equipment, where dependable signal integrity and robustness are mandatory.
- Switching applications in aerospace control systems requiring stable operation under wide temperature ranges.
- Signal processing circuits in precision measurement devices, benefiting from low noise and consistent gain.
- Industrial automation controls that demand reliable transistor switching in harsh environmental conditions.
JANS2N2221UA-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and noise performance compared to standard commercial variants. Its military-grade construction assures enhanced sensitivity and accuracy in demanding applications. The hermetic metal can package improves thermal management and environmental resistance, providing longer operational life and stable electrical characteristics. These advantages make it an ideal choice for engineers sourcing components for rugged, high-precision industrial and aerospace systems.
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JANS2N2221UA-Transistor Brand Info
The JANS2N2221UA is a variant of the well-known 2N2221 transistor, produced under stringent military standards by recognized semiconductor manufacturers specializing in high-reliability components. The ??JAN?? prefix indicates qualification to Joint Army-Navy specifications, ensuring the device meets strict performance and durability criteria for defense and aerospace sectors. This transistor is distributed by authorized suppliers who provide traceability and certification, supporting mission-critical designs requiring guaranteed quality and consistent operation.
FAQ
What does the ??UA?? suffix indicate in the JANS2N2221UA transistor?
The ??UA?? suffix typically designates a specific military-grade variant of the 2N2221 transistor, indicating enhanced screening, testing, and reliability standards. This ensures the device meets stringent performance criteria required for defense and aerospace applications.
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Can this transistor operate at high frequencies?
Yes, this transistor has a transition frequency around 250 MHz, making it suitable for moderate high-frequency applications such as RF circuits and fast switching environments.
What is the maximum power dissipation capability of this transistor?
The device can dissipate up to 625 milliwatts of power under specified operating conditions, which allows it to handle moderate power levels without overheating when properly







