JANKCDL2N5154-Transistor-Die by JANKCDL2N ?C High-Performance Amplifier Die Package

  • This transistor die enables efficient switching and amplification in electronic circuits, improving overall device performance.
  • Its electrical characteristics support stable operation under varying load conditions, ensuring consistent signal integrity.
  • The compact die size allows integration into space-constrained designs, optimizing board layout and reducing weight.
  • Ideal for power management applications, it enhances thermal handling and contributes to longer system uptime.
  • Manufactured to meet strict quality standards, this component offers reliable functionality over extended operational periods.
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产品上方询盘

JANKCDL2N5154-Transistor-Die Overview

The JANKCDL2N5154-Transistor-Die is a high-performance semiconductor component designed for integration into advanced electronic circuits. This transistor die offers precise control of current flow, ensuring efficient amplification and switching capabilities. Its die form factor allows for flexible packaging and integration into custom modules, making it ideal for designers seeking compact and reliable transistor solutions. With stable thermal characteristics and robust electrical parameters, this component supports demanding industrial and consumer electronics applications. For detailed sourcing and technical support, visit the IC Manufacturer website.

JANKCDL2N5154-Transistor-Die Key Features

  • High current gain: Enables efficient signal amplification, reducing power loss and improving circuit performance.
  • Low saturation voltage: Minimizes voltage drop during switching, enhancing overall energy efficiency.
  • Robust thermal stability: Ensures reliable operation under elevated junction temperatures, extending device lifespan.
  • Compact die size: Facilitates integration into space-constrained designs, providing versatility for various applications.

JANKCDL2N5154-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)100V
Collector Current (IC)8A
Power Dissipation (PD)2W
DC Current Gain (hFE)40 ?C 160?C
Transition Frequency (fT)80MHz
Junction Temperature (Tj)150??C
Collector-Base Voltage (VCBO)100V
Emitter-Base Voltage (VEBO)5V

JANKCDL2N5154-Transistor-Die Advantages vs Typical Alternatives

This transistor die provides superior current handling and voltage ratings compared to typical alternatives, enabling enhanced power efficiency and reliability. Its wide gain range supports flexible circuit design, while robust thermal limits ensure stable operation in harsh environments. The compact die format allows for easier integration and customization, making it a preferred choice for high-volume industrial applications requiring consistent performance and longevity.

Typical Applications

  • Power amplification in industrial control systems, where reliable switching and signal integrity are critical for maintaining operational efficiency and safety.
  • Driver stages in motor control circuits, enhancing torque control and reducing energy consumption.
  • Switching elements in power management modules, enabling precise load regulation and protection.
  • Signal amplification in communication equipment, supporting high-frequency operation with minimal distortion.

JANKCDL2N5154-Transistor-Die Brand Info

This transistor die is offered by a reputable semiconductor manufacturer specializing in discrete components for industrial and consumer electronics markets. The product is engineered to meet rigorous quality standards, ensuring consistency across production batches. Designed with advanced fabrication techniques, it supports a broad range of applications requiring dependable transistor performance. This product line reflects the manufacturer??s commitment to innovation, reliability, and technical support for design engineers and sourcing specialists.

FAQ

What is the maximum collector current rating of this transistor die?

The maximum collector current rating for this transistor die is 8 amperes, which allows it to handle moderate to high current loads typical in power amplification and switching applications.

Can this transistor die operate at high frequencies?

Yes, the device features a transition frequency of 80 MHz, making it suitable for applications that require moderately high-speed switching and signal amplification in communication and control circuits.

What are the thermal limits to consider during operation?

The maximum junction temperature is specified at 150??C, indicating the device??s ability to maintain reliable performance under elevated thermal conditions. Proper heat dissipation methods should be employed to avoid exceeding this limit.

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产品中间询盘

Is this transistor die suitable for integration into compact modules?

Absolutely. The compact die size facilitates easy integration into space-constrained designs, offering flexibility for engineers working on miniaturized electronic assemblies.

What voltage ratings does this transistor die support?

This transistor die supports a collector-emitter voltage and collector-base voltage of up to 100V, and an emitter-base voltage of 5V, making it suitable for a wide range of medium-voltage applications.

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