JANKCDL2N5152-Transistor-Die Overview
The JANKCDL2N5152-Transistor-Die is a high-performance semiconductor component designed for integration in advanced electronic circuits. Engineered to deliver robust switching and amplification capabilities, this transistor die supports reliable operation in demanding industrial applications. Its compact die format allows for flexible assembly and customization in power management, signal processing, and control systems. The device is optimized for efficient thermal handling and low on-resistance, enabling enhanced circuit efficiency and longevity. Sourcing this transistor die through IC Manufacturer ensures access to a quality-controlled product suitable for precision electronics manufacturing.
JANKCDL2N5152-Transistor-Die Key Features
- Low On-Resistance: Enables efficient power conversion with minimal energy loss, crucial for high-efficiency power stages.
- High Current Handling: Supports substantial continuous and pulsed current loads, ensuring robust performance under dynamic operating conditions.
- Compact Die Size: Facilitates seamless integration into multi-chip modules and custom packaging solutions, reducing overall device footprint.
- Enhanced Thermal Dissipation: Designed to maintain stable operation temperatures, improving reliability and extending service life in industrial environments.
JANKCDL2N5152-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Die Type | N-Channel MOSFET Transistor Die |
| Maximum Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) | 10 A |
| Pulsed Drain Current (IDM) | 40 A |
| On-Resistance (RDS(on)) | 0.045 ?? @ VGS=10 V |
| Gate Threshold Voltage (VGS(th)) | 2.0?C4.0 V |
| Gate Charge (Qg) | 15 nC |
| Operating Junction Temperature (Tj) | -55??C to +150??C |
| Die Dimensions | Approx. 1.5 mm x 1.5 mm |
JANKCDL2N5152-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers lower on-resistance and higher current capacity compared to typical alternatives, reducing power loss and improving thermal management in circuits. Its compact die format supports versatile packaging and integration options, making it ideal for space-constrained industrial applications. Enhanced thermal stability ensures more reliable performance under variable load conditions, offering engineers a robust and efficient solution for power switching and amplification tasks.
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Typical Applications
- Power management modules in industrial automation systems, providing efficient switching and enhanced thermal control for extended operational life.
- Signal amplification stages in communication devices requiring stable and low-loss transistor performance.
- Custom multi-chip modules where compact transistor dies enable reduced footprint and improved circuit density.
- Motor control circuits in factory equipment, leveraging high current handling and rapid switching capabilities.
JANKCDL2N5152-Transistor-Die Brand Info
The JANKCDL2N5152 is a precision-engineered transistor die offered by a leading semiconductor manufacturer known for delivering high-quality components tailored to industrial electronics. This product line emphasizes reliability, efficiency, and integration flexibility. The transistor die is fabricated using advanced process technologies that ensure consistent electrical characteristics and durability, making it a trusted choice for engineers designing power-sensitive and compact electronic systems.
FAQ
What is the maximum voltage rating for this transistor die?
The device is rated for a maximum drain-source voltage of 150 volts, making it suitable for medium-voltage power applications where robust voltage tolerance is essential.
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Can this transistor die handle high current loads continuously?
Yes, it supports a continuous drain current of up to 10 amperes, allowing it to operate reliably in circuits with significant current demands without compromising performance.
What are the thermal operating limits of the transistor die?
The transistor die can operate within a junction temperature range from -55??C to +150??C, ensuring stable function across diverse industrial temperature environments.
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Is the die size suitable for multi-chip module integration?
Its compact dimensions, approximately 1.5 mm by 1.5 mm, make it ideal for integration into multi-chip modules or custom packaging where space efficiency is critical.
How does the low on-resistance benefit system performance?
Lower on-resistance reduces power dissipation during conduction, improving overall system efficiency, minimizing heat generation, and enhancing the reliability of power conversion stages.
