JANKCD2N5154-Transistor-Die Overview
The JANKCD2N5154-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for integration into custom semiconductor packages and hybrid circuits. This transistor die offers precise switching and amplification capabilities suitable for a range of industrial and electronic applications. Engineered to deliver consistent electrical characteristics, it supports efficient current handling with reliable gain performance. Its compact die format enables flexible integration into advanced electronic assemblies. For detailed technical support and sourcing, visit the IC Manufacturer website.
JANKCD2N5154-Transistor-Die Key Features
- High Current Handling: Supports collector currents up to 10A, enabling robust power switching applications.
- Reliable Voltage Rating: With a collector-emitter voltage rating of 60V, it ensures safe operation under demanding electrical conditions.
- Efficient Gain Performance: Typical DC current gain (hFE) range from 20 to 70 allows for effective signal amplification and control.
- Compact Die Format: Facilitates easy integration into custom semiconductor assemblies, contributing to reduced overall device size.
JANKCD2N5154-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (Vce) | 60 V (maximum) |
| Collector Current (Ic) | 10 A (maximum) |
| Power Dissipation (Pd) | 40 W (maximum) |
| DC Current Gain (hFE) | 20 to 70 (typical) |
| Transition Frequency (fT) | 3 MHz (typical) |
| Base-Emitter Voltage (Vbe) | 5 V (maximum) |
| Junction Temperature (Tj) | 150 ??C (maximum) |
JANKCD2N5154-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers a superior balance of high current capacity and voltage tolerance compared to typical alternatives. Its DC gain range ensures reliable amplification with minimal signal distortion. The die format allows for improved thermal management and integration flexibility, providing enhanced reliability and efficiency for power switching and amplification roles in industrial electronics.
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Typical Applications
- Power switching circuits in industrial control systems where robust current handling and fast switching are essential for operational efficiency.
- Amplification stages in audio equipment requiring stable gain and low distortion for signal fidelity.
- Hybrid integrated circuits that benefit from compact transistor dies for improved miniaturization and thermal performance.
- Custom semiconductor assembly projects demanding precise transistor characteristics and reliable electrical performance.
JANKCD2N5154-Transistor-Die Brand Info
The JANKCD2N5154-Transistor-Die is produced under stringent quality standards to meet industrial-grade semiconductor requirements. This product represents the brand??s commitment to delivering reliable, high-performance transistor dies for integration into various electronic devices and assemblies. With a focus on precision manufacturing and consistent electrical parameters, the transistor die is trusted by engineers and sourcing specialists for critical applications requiring dependable switching and amplification.
FAQ
What type of transistor is the JANKCD2N5154-Transistor-Die?
It is an NPN bipolar junction transistor (BJT) die designed for integration into semiconductor packages and hybrid circuits. This type is commonly used for switching and amplification in industrial electronics.
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What is the maximum collector current this transistor die can handle?
The maximum collector current rating is 10 amperes, making it suitable for high-current switching and amplification tasks in power electronics applications.
What are the voltage ratings for this transistor die?
The collector-emitter voltage (Vce) maximum rating is 60 volts, and the base-emitter voltage (Vbe) maximum is 5 volts, ensuring safe operation within typical electronic circuit limits.
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How does the DC current gain (hFE) affect the transistor??s performance?
The DC current gain, ranging from 20 to 70, determines the amplification capability of the transistor. A higher gain allows more efficient control of larger currents with smaller base currents, improving signal amplification and switching efficiency.
In what applications is this transistor die typically used?
It is commonly used in power switching circuits, audio amplifiers, hybrid integrated circuits, and custom semiconductor assemblies requiring reliable, high-current transistor performance in a compact die form.
