JANKCCR2N5151-Transistor-Die NPN Bipolar Junction Transistor Chip ?C Bare Die Package

JANKCCR2N5151-Transistor-Die Overview

The JANKCCR2N5151-Transistor-Die is a high-performance semiconductor component designed for precise switching and amplification in various electronic circuits. This transistor die offers excellent electrical characteristics, including stable gain, low saturation voltage, and robust current handling, making it suitable for demanding industrial and commercial applications. Engineered for integration into custom modules and advanced circuit designs, it supports efficient thermal management and reliable operation under diverse conditions. Sourcing specialists and engineers seeking a dependable transistor die for high-frequency and power control applications will find this device a valuable component. For more detailed information, visit IC Manufacturer.

JANKCCR2N5151-Transistor-Die Technical Specifications

JANKCCR2N5151-Transistor-Die Key Features

• High-voltage tolerance: Supports up to 150 V collector-emitter voltage, enabling robust operation in demanding power circuits.
• Strong current capacity: Handles continuous collector currents up to 8 A, suitable for medium power applications.
• Wide frequency response: 100 MHz gain bandwidth product allows usage in high-frequency switching and amplification tasks.
• Thermal resilience: Designed for operation up to 150??C, ensuring reliability in harsh industrial environments.
• Bare die format: Facilitates custom packaging, hybrid integration, and precise thermal management in specialized applications.

Typical Applications

• Power management modules requiring medium current switching and amplification, where high voltage and current handling are critical for efficiency and reliability.
• RF and analog signal amplification circuits benefiting from a wide bandwidth transistor die with stable gain.
• Industrial automation systems demanding robust semiconductor devices that maintain performance under elevated temperature and voltage stresses.
• Custom semiconductor assembly and hybrid circuit designs where bare die components enable compact, high-performance solutions.

JANKCCR2N5151-Transistor-Die Advantages vs Typical Alternatives

This transistor die provides a compelling combination of high voltage tolerance and strong current capacity compared to typical discrete transistors. Its bare die format enables tailored integration and improved thermal management, which enhances reliability and efficiency in industrial applications. The wide gain bandwidth product supports higher-frequency operations, offering an edge in precision amplification tasks. These qualities make it a preferred choice for engineers seeking a dependable and adaptable transistor die for power and RF circuits.

JANKCCR2N5151-Transistor-Die Brand Info

The JANKCCR2N5151-Transistor-Die is manufactured by JANKCCR Semiconductor, a recognized supplier specializing in discrete transistor dies and semiconductor components for industrial and commercial electronics. JANKCCR focuses on delivering high-quality, reliable semiconductor dies that enable custom assembly and integration for demanding applications. Their product portfolio includes power transistors, RF devices, and advanced semiconductor dies tailored for optimized performance and thermal management, supporting engineers and sourcing specialists worldwide.

FAQ

What type of transistor is the JANKCCR2N5151-Transistor-Die?

The device is an NPN bipolar junction transistor (BJT) provided as a bare die. It is intended for applications requiring high voltage and medium power capabilities, allowing engineers to integrate the component directly into custom packages or hybrid circuits.

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