JANKCCR2N3501-Transistor-Die Overview
The JANKCCR2N3501-Transistor-Die is a high-performance semiconductor component designed for robust switching and amplification in industrial electronics. This transistor die offers precise electrical characteristics, ensuring reliable operation in demanding environments. Its intrinsic design supports efficient thermal management and high current handling capabilities, making it suitable for power control applications. Engineers and sourcing specialists will appreciate its optimized footprint for integration into custom modules and compact assemblies. The device is manufactured under stringent quality controls, reflecting the standards upheld by IC Manufacturer.
JANKCCR2N3501-Transistor-Die Key Features
- High Current Capacity: Supports substantial collector current allowing efficient control of power loads in industrial circuits.
- Low Saturation Voltage: Minimizes power loss during switching, enhancing overall circuit efficiency.
- Thermal Stability: Engineered for reliable operation under elevated temperatures, increasing device longevity.
- Compact Die Size: Facilitates seamless integration into multi-chip modules and space-constrained applications.
JANKCCR2N3501-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (Vce) | 350 V |
| Collector Current (Ic) | 2 A |
| Power Dissipation (Pd) | 25 W |
| DC Current Gain (hFE) | 40 – 160 |
| Transition Frequency (ft) | 70 MHz |
| Junction Temperature (Tj) | 150 ??C |
| Package Type | Transistor Die |
| Base-Emitter Voltage (Vbe) | 1.2 V (typical) |
JANKCCR2N3501-Transistor-Die Advantages vs Typical Alternatives
This transistor die provides superior voltage handling and current capacity compared to typical alternatives, enabling higher power circuit designs with lower losses. Its enhanced thermal stability and low saturation voltage contribute to increased reliability and efficiency, critical for industrial applications. The compact die format simplifies integration, offering design flexibility while maintaining consistent performance under demanding operational conditions.
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Typical Applications
- Power Management Systems: Utilized in regulating and switching power in industrial power supplies and converters, ensuring precise control and efficiency.
- Motor Control Circuits: Enables effective switching for DC and AC motor drives, delivering reliable performance in automation systems.
- Amplification Modules: Suitable for signal amplification tasks in analog electronics requiring stable gain characteristics.
- Custom Semiconductor Assemblies: Integrated into multi-chip modules for specialized industrial electronics requiring compact, high-performance transistor solutions.
JANKCCR2N3501-Transistor-Die Brand Info
The JANKCCR2N3501-Transistor-Die is offered by a reputable semiconductor manufacturer known for delivering high-quality, reliable components tailored for industrial applications. This product represents the brand??s commitment to precision engineering and rigorous quality standards. Designed to meet stringent performance criteria, it supports modern electronics requiring durable and efficient transistor solutions.
FAQ
What is the maximum collector current rating of this transistor die?
The maximum collector current rating for this transistor die is 2 amperes, allowing it to handle moderate power loads typical in industrial switching and amplification circuits.
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Can this transistor die operate reliably at high temperatures?
Yes, the device is rated for operation up to a junction temperature of 150??C, ensuring reliable performance under elevated thermal conditions common in industrial environments.
What advantages does the low saturation voltage provide?
A low saturation voltage reduces power losses during transistor switching, improving overall circuit efficiency and reducing heat generation, which enhances device reliability and longevity.
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Is this transistor die suitable for integration into compact modules?
Absolutely. The compact size of the transistor die allows for easy integration into multi-chip modules and space-constrained assemblies, offering design flexibility for engineers.
What is the typical DC current gain (hFE) range for this component?
The DC current gain varies between 40 and 160, providing adequate amplification capabilities for a range of industrial electronic applications requiring stable and predictable transistor behavior.







