JANKCCR2N3500-Transistor-Die Overview
The JANKCCR2N3500 transistor die is a high-performance semiconductor component designed for power amplification and switching applications. Engineered to deliver reliable operation under demanding electrical conditions, this transistor die offers consistent gain characteristics and robust thermal handling capabilities. Its compact form factor and precise fabrication ensure seamless integration into advanced electronic assemblies. Ideal for engineers and sourcing specialists focused on power electronics, the device supports efficient current control and voltage regulation. For detailed technical support and sourcing information, visit IC Manufacturer.
JANKCCR2N3500-Transistor-Die Key Features
- High Current Handling: Supports maximum collector current that ensures robust power switching with minimal thermal stress.
- Low Saturation Voltage: Enables efficient conduction reducing power losses and improving system efficiency.
- Thermally Stable Die Design: Enhances reliability and operational lifespan under varying temperature conditions.
- Optimized Gain Characteristics: Provides consistent amplification for precise control in analog and digital circuits.
JANKCCR2N3500-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 350 | V |
| Collector Current (IC) | 2 | A |
| Power Dissipation (PD) | 40 | W |
| DC Current Gain (hFE) | 50-200 | ?C |
| Transition Frequency (fT) | 100 | MHz |
| Junction Temperature (TJ) | 150 | ??C |
| Base-Emitter Voltage (VBE) | 1.2 | V |
| Storage Temperature Range | -55 to 150 | ??C |
JANKCCR2N3500-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior power handling and low saturation voltage compared to typical alternatives, resulting in less power dissipation and higher efficiency. Its stable gain and thermal robustness make it a reliable choice for critical power switching and amplification tasks. The compact die format facilitates better integration in space-constrained industrial designs, enhancing overall system performance and durability.
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Typical Applications
- Power Amplifiers: Suitable for audio and RF amplification where stable gain and high current capacity are required for clear signal processing.
- Switching Circuits: Ideal for industrial motor control and power regulation requiring efficient switching with minimal losses.
- Voltage Regulators: Used in voltage stabilization circuits to maintain consistent output under varying load conditions.
- Industrial Electronics: Applicable in control modules demanding high reliability and thermal endurance in harsh operating environments.
JANKCCR2N3500-Transistor-Die Brand Info
The JANKCCR2N3500 transistor die is manufactured by a leading semiconductor producer specializing in robust, high-quality discrete components for power electronics. This product embodies the company??s commitment to precision engineering and reliability, supporting demanding industrial applications worldwide. The brand??s expertise in silicon die fabrication ensures that this transistor meets stringent performance and durability standards expected in professional electronics design and manufacturing.
FAQ
What is the maximum collector current rating of this transistor die?
The maximum collector current rating is 2 amperes, allowing the device to handle substantial current flows suitable for power amplification and switching duties without compromising reliability.
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Can this transistor die operate at high temperatures?
Yes, the transistor die supports a maximum junction temperature of up to 150??C, enabling it to operate reliably in high-temperature environments commonly encountered in industrial electronics.
How does the low saturation voltage benefit my application?
A low saturation voltage reduces power losses during conduction, which improves overall energy efficiency and decreases heat generation, making the device suitable for power-sensitive designs.
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Is this transistor die suitable for RF applications?
With a transition frequency of 100 MHz, this transistor die can be effectively used in certain RF amplifier applications, providing stable gain and reliable switching performance in the mid-frequency range.
What packaging options are available for this transistor die?
As a transistor die, this product is supplied in bare silicon form for integration into custom packages or modules by device manufacturers, enabling flexible assembly tailored to specific application requirements.
