JANKCCR2N3499-Transistor-Die by JANKCCR2N – High-Performance Switching Transistor Die

  • This transistor die enables efficient current amplification, improving signal control in electronic circuits.
  • The device’s electrical characteristics support stable operation, crucial for consistent performance under varying loads.
  • Its compact die size facilitates integration into space-constrained designs, aiding in overall device miniaturization.
  • Ideal for use in power management modules, it helps regulate voltage and protect sensitive components from fluctuations.
  • Manufactured with stringent quality controls, it ensures durability and long-term reliability in demanding environments.
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产品上方询盘

JANKCCR2N3499-Transistor-Die Overview

The JANKCCR2N3499-Transistor-Die is a precision semiconductor component designed for high-performance amplification and switching applications. This transistor die offers robust electrical characteristics with a focus on reliable current handling and efficient signal processing. Its compact die structure supports integration into custom modules and provides enhanced thermal stability, making it suitable for demanding industrial and consumer electronics. Manufactured to meet stringent quality standards, this transistor die ensures consistent performance across various operating conditions. For more detailed technical support and product availability, visit IC Manufacturer.

JANKCCR2N3499-Transistor-Die Key Features

  • High current gain: Enables efficient signal amplification, improving overall circuit sensitivity and response.
  • Low saturation voltage: Minimizes power loss during switching, enhancing energy efficiency in power management applications.
  • Thermal stability: Maintains consistent performance under varying temperature conditions, increasing device reliability.
  • Compact die size: Facilitates integration into space-constrained designs, supporting modern miniaturized electronics.

JANKCCR2N3499-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)40V
Collector Current (IC)100mA
Power Dissipation (Ptot)350mW
Gain Bandwidth Product (fT)150MHz
DC Current Gain (hFE)100?C300??
Base-Emitter Voltage (VBE)0.7V
Transition Frequency150MHz
Operating Temperature Range-55 to +150??C

JANKCCR2N3499-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior thermal stability and a higher gain bandwidth product compared to standard transistors, resulting in improved switching speeds and signal integrity. Its low saturation voltage reduces power dissipation, which enhances efficiency in power-sensitive designs. Additionally, the die??s compact structure supports easier integration into custom modules, providing a distinct advantage in space-constrained applications.

Typical Applications

  • Signal amplification in analog and mixed-signal circuits where precise current control and low noise are essential for optimal performance.
  • Switching components in power management systems requiring efficient energy transfer and minimal losses.
  • Integration into semiconductor modules for industrial automation, benefiting from its reliable performance under varied thermal conditions.
  • Usage in communication devices demanding high-frequency operation with stable gain and low distortion.

JANKCCR2N3499-Transistor-Die Brand Info

The JANKCCR2N3499-Transistor-Die is produced by a reputable semiconductor manufacturer known for delivering high-quality transistor dies suited for industrial and commercial electronics. This product line emphasizes precision engineering, consistent electrical characteristics, and stringent quality control to ensure dependable performance in critical applications. Designed to meet the evolving needs of electronics engineers and sourcing specialists, this transistor die exemplifies the brand??s commitment to innovation and reliability.

FAQ

What are the key electrical ratings of the transistor die?

The device supports a collector-emitter voltage of 40 V and can handle collector currents up to 100 mA. Its power dissipation rating is 350 mW, ensuring it operates safely within these electrical limits during typical application scenarios.

How does the transistor die perform at high frequencies?

With a gain bandwidth product of approximately 150 MHz, the transistor die is suitable for high-frequency applications, providing stable gain and efficient signal amplification even in demanding RF or communication circuits.

What temperature range can the device reliably operate within?

The transistor die maintains performance across a broad operating temperature range from -55??C to +150??C, making it ideal for environments requiring robust thermal stability and reliability.

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产品中间询盘

Is the transistor die compatible with automated assembly processes?

Yes, its compact die size and standardized electrical characteristics facilitate integration into automated semiconductor module assembly lines, supporting efficient production workflows and consistent quality.

What benefits does this transistor die offer for power management circuits?

Its low saturation voltage reduces power dissipation during switching operations, enhancing overall efficiency in power management applications and contributing to longer device lifetimes and lower thermal stress.

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