JANKCCP2N5153-Transistor-Die Overview
The JANKCCP2N5153-Transistor-Die is a high-performance semiconductor component designed for integration into power management and signal amplification circuits. This transistor die offers robust electrical characteristics, including a maximum collector current suitable for medium power applications and a breakdown voltage that ensures reliable operation under varying conditions. Its compact die format facilitates seamless embedding in custom packages, supporting diverse industrial and electronic system designs. Engineered for precision and durability, this transistor die is ideal for engineers and sourcing specialists seeking a dependable component from a trusted IC Manufacturer with consistent quality and performance metrics.
JANKCCP2N5153-Transistor-Die Key Features
- High Collector-Emitter Voltage: Supports up to 60V, enabling operation in demanding power circuits with enhanced voltage tolerance.
- Collector Current Capacity: Handles continuous collector currents up to 1.5A, allowing efficient control in medium power amplification and switching applications.
- Low Saturation Voltage: Minimizes power loss during conduction, improving overall system efficiency and thermal management.
- Die Format: Compact transistor die size allows for flexible integration into custom semiconductor packages or modules tailored to specific industrial needs.
- Reliable Thermal Performance: Designed to maintain stability and operational integrity under elevated junction temperatures for enhanced device longevity.
- Robust Current Gain (hFE): Ensures consistent amplification characteristics, critical for precise electronic control and signal processing.
JANKCCP2N5153-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1.5 A |
| Power Dissipation (PD) | 1 W (die level, depending on packaging) |
| DC Current Gain (hFE) | 40 ?C 160 (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Junction Temperature (Tj) | 150 ??C (max) |
JANKCCP2N5153-Transistor-Die Advantages vs Typical Alternatives
This transistor die demonstrates superior voltage and current handling capabilities compared to typical alternatives in its class, providing engineers with enhanced reliability and efficiency. Its low saturation voltage reduces power losses during switching, making it suitable for energy-conscious designs. The die format allows for customized packaging, offering integration flexibility that standard packaged transistors may not provide. These factors combine to deliver a robust solution optimized for precision amplification and medium power management applications.
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Typical Applications
- Power Amplification Circuits: Ideal for use in intermediate power stages where stable current gain and voltage tolerance are crucial for signal integrity.
- Switching Regulators: Suitable for efficient switching in DC-DC converters and voltage regulators due to low saturation voltage and reliable thermal characteristics.
- Industrial Control Systems: Enables precise control in motor drivers, relay drivers, and other industrial automation components.
- Custom Semiconductor Modules: Designed for embedding in specialized packages for OEM solutions requiring tailored transistor performance.
JANKCCP2N5153-Transistor-Die Brand Info
The JANKCCP2N5153-Transistor-Die is a product from a reputable semiconductor manufacturer known for delivering consistent quality and high reliability in transistor dies. This component represents a commitment to technical excellence, offering precise electrical parameters and robust performance suited for a wide range of industrial electronics applications. The brand emphasizes stringent process controls and thorough quality assurance, ensuring that each die meets rigorous standards for integration into advanced electronic systems.
FAQ
What is the maximum collector current supported by this transistor die?
The transistor die supports a maximum continuous collector current of 1.5 amperes, making it suitable for medium power applications requiring steady current handling.
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Can this transistor die handle high voltage applications?
Yes, it features a collector-emitter voltage rating up to 60 volts, allowing reliable operation in circuits with moderately high voltage demands.
How does the die format affect integration in electronic designs?
The compact die format enables flexible integration into custom semiconductor packages or modules, allowing engineers to optimize board space and tailor thermal management solutions.
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What thermal limits should be considered when using this transistor die?
The maximum junction temperature is specified at 150 ??C, so appropriate heat sinking or thermal design must be employed to maintain reliable operation within this limit.
Is this transistor die suitable for high-frequency applications?
With a typical transition frequency around 100 MHz, this transistor die can be effectively used in moderate frequency amplification and switching circuits, balancing gain and speed.
