JANKCCP2N3501-Transistor-Die Overview
The JANKCCP2N3501-Transistor-Die is a high-performance semiconductor component designed for integration in power amplification and switching circuits. Its robust construction ensures reliable operation under diverse electrical conditions, making it suitable for industrial and consumer electronics applications. This transistor die exhibits stable gain characteristics and efficient current handling capabilities, contributing to optimized circuit performance and thermal management. Sourced from a trusted IC Manufacturer, it supports engineers and sourcing specialists seeking quality transistor dies for custom assembly and specialized electronic modules.
JANKCCP2N3501-Transistor-Die Key Features
- High current handling capability: Supports efficient power switching and amplification, reducing losses in demanding circuits.
- Stable gain characteristics: Ensures consistent amplification performance for reliable signal processing in analog applications.
- Compact die size: Facilitates seamless integration into multi-chip modules and hybrid circuits, optimizing board space.
- Thermally robust design: Enhances operational reliability by maintaining performance integrity under elevated temperatures.
JANKCCP2N3501-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector Current (IC) | 2 | A |
| Power Dissipation (PD) | 30 | W |
| Current Gain (hFE) | 40 – 320 | (typical range) |
| Transition Frequency (fT) | 70 | MHz |
| Base-Emitter Voltage (VBE) | 1.2 | V |
| Operating Junction Temperature (TJ) | 150 | ??C |
| Package Type | Die (bare silicon) | N/A |
JANKCCP2N3501-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current handling and thermal resilience compared to typical discrete transistors, enabling enhanced power efficiency and longevity in demanding environments. Its wide gain range and stable frequency response provide engineers with flexibility while maintaining signal integrity. The bare die format allows for custom packaging and integration, offering designers greater control over module form factors and system-level optimization.
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Typical Applications
- Power amplifier stages in audio and RF circuits requiring dependable gain and current handling with minimal distortion.
- Switching regulators and power management systems where efficient transistor switching improves overall device performance.
- Industrial control systems demanding reliable semiconductor components to manage variable loads and harsh conditions.
- Custom hybrid integrated circuits and multi-chip modules that benefit from compact, bare die transistor integration.
JANKCCP2N3501-Transistor-Die Brand Info
This transistor die is produced under stringent quality controls by a reputable semiconductor manufacturer known for delivering reliable and high-performance discrete devices. The brand ensures consistent electrical characteristics and die integrity to meet the rigorous standards required by industrial and commercial electronics sectors. This product is suited for engineers and sourcing specialists who prioritize precision and durability in transistor components for advanced electronic designs.
FAQ
What type of transistor is the JANKCCP2N3501-Transistor-Die?
It is a bipolar junction transistor (BJT) provided in bare die form, designed primarily for power amplification and switching applications. This transistor features an NPN-type construction optimized for current gain and voltage handling.
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How does the bare die format benefit electronic design?
The bare die format allows engineers to integrate the transistor directly into custom packages or hybrid circuits, offering design flexibility and improved thermal management compared to packaged components, especially useful in compact or high-density assemblies.
What is the maximum collector-emitter voltage supported?
The transistor die supports a maximum collector-emitter voltage of 100 volts, making it suitable for medium-power applications and ensuring safe operation within specified voltage limits.
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Can this transistor die operate reliably at high temperatures?
Yes, it is rated for an operating junction temperature up to 150??C, allowing it to maintain performance and reliability in thermally demanding environments common in industrial electronics.
What applications are best suited for this transistor die?
This device is ideal for power amplifiers, switching regulators, industrial control circuits, and hybrid integrated modules where reliable current handling, stable gain, and compact integration are essential.
