JANKCCM2N5151-Transistor-Die NPN Bipolar Junction Transistor – Die Package by ON Semiconductor

JANKCCM2N5151-Transistor-Die Overview

The JANKCCM2N5151-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for integration into custom semiconductor assemblies. This transistor die offers reliable switching and amplification capabilities suitable for industrial and electronic applications requiring precise current control and stable gain characteristics. Its compact die format facilitates flexible integration into hybrid circuits and advanced packaging solutions. Engineers and sourcing specialists will appreciate the balance of performance and adaptability this transistor die provides within power management, signal amplification, and switching circuits. For detailed sourcing and technical support, visit IC Manufacturer.

JANKCCM2N5151-Transistor-Die Technical Specifications

JANKCCM2N5151-Transistor-Die Key Features

• High current handling capability: Supports collector currents up to 1.5 A, enabling robust switching and amplification in demanding circuits.
• Wide voltage tolerance: With a maximum collector-emitter voltage of 60 V, it suits a variety of medium-voltage applications.
• Exceptional frequency response: Transition frequency of 100 MHz ensures efficient operation in high-speed signal processing and RF amplification.
• Compact bare die design: Facilitates integration into custom modules and hybrid circuits, enhancing design flexibility and thermal management options.

Typical Applications

• Power amplification stages in audio and RF circuits where high gain and fast switching are essential for signal integrity.
• Switching devices in medium-voltage power supplies and industrial control systems requiring precise current regulation.
• Driver transistors in relay and motor control circuits, offering reliable performance under varying load conditions.
• Custom semiconductor module assembly for specialized industrial equipment, enabling tailored performance and packaging.

JANKCCM2N5151-Transistor-Die Advantages vs Typical Alternatives

This transistor die stands out with its combination of high current capacity and wide voltage tolerance, providing engineers with a reliable solution that balances power and frequency response. Compared to packaged transistors, the bare die format allows for improved thermal management and design customizability, which can enhance overall system efficiency and long-term reliability. Its high transition frequency also supports faster switching applications, making it advantageous in both amplification and control circuit designs.

JANKCCM2N5151-Transistor-Die Brand Info

The JANKCCM2N5151 transistor die is produced by a recognized semiconductor manufacturer specializing in discrete transistor devices and bare die components for industrial electronics. This product reflects the brand??s commitment to delivering high-quality, precision-engineered semiconductor solutions designed to meet stringent performance requirements. Their portfolio includes a range of transistor dies optimized for power management, amplification, and switching, supporting diverse applications in industrial automation, communication, and power electronics sectors.

FAQ

What is the maximum collector current for this transistor die?

The maximum collector current (Ic) for this transistor die is rated at 1.5 A, enabling it to handle moderate power levels suitable for many industrial and electronic switching applications.

Can this transistor die be used in high-frequency circuits?

Yes, with a transition frequency (ft) of approximately 100 MHz, this transistor die is suitable for high-frequency applications, including RF amplification and fast switching circuits.

What are the thermal limits of the transistor die?

The device supports a maximum junction temperature of 150??C, which requires adequate thermal management when integrated