JANKCCM2N3500-Transistor-Die Overview
The JANKCCM2N3500-Transistor-Die is a high-performance semiconductor component designed for efficient switching and amplification in industrial electronics. This transistor die offers precise electrical characteristics suitable for power management and signal control applications. Its robust architecture ensures reliable operation under demanding conditions, making it a preferred choice for engineers seeking a compact and effective solution for integration into discrete or hybrid circuits. For detailed sourcing and technical support, visit IC Manufacturer.
JANKCCM2N3500-Transistor-Die Key Features
- High current handling capability: Enables efficient power switching with minimized thermal stress, enhancing system reliability.
- Low saturation voltage: Improves energy efficiency by reducing power loss during conduction phases.
- Compact die size: Facilitates easy integration into multi-chip modules and compact electronic assemblies.
- Stable gain characteristics: Ensures consistent amplification performance across varying operating conditions.
JANKCCM2N3500-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 350 V |
| Collector Current (IC) | 2 A (continuous) |
| Power Dissipation (PD) | 30 W (max) |
| DC Current Gain (hFE) | 40 ?C 160 |
| Transition Frequency (fT) | 3 MHz (typical) |
| Package Type | Die (bare semiconductor) |
| Operating Junction Temperature (Tj) | -65??C to +150??C |
| Storage Temperature Range (Tstg) | -65??C to +150??C |
JANKCCM2N3500-Transistor-Die Advantages vs Typical Alternatives
This transistor die provides enhanced voltage tolerance and current capacity compared to typical alternatives, offering improved power efficiency and thermal stability. Its bare die format allows for flexible integration, reducing parasitic elements and boosting performance in high-frequency and high-power applications. These strengths make it well-suited for engineers prioritizing precision, durability, and streamlined assembly in power electronics.
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Typical Applications
- Power switching circuits in industrial power supplies, where high voltage and current handling are critical for controlling load demands efficiently.
- Amplification stages in signal processing units requiring stable gain and low distortion.
- Motor control systems that benefit from robust transistor performance under dynamic loads and varying temperatures.
- Hybrid integrated circuits where compact semiconductor dies are essential for minimizing package size and optimizing thermal dissipation.
JANKCCM2N3500-Transistor-Die Brand Info
The JANKCCM2N3500-Transistor-Die is a product from a trusted semiconductor manufacturer specializing in industrial-grade transistor solutions. This product line is recognized for its commitment to quality, reliability, and performance consistency. The transistor die is designed to meet rigorous industry standards, ensuring dependable operation across diverse electronic applications. The brand supports its components with comprehensive datasheets and technical assistance, facilitating seamless integration into engineering projects.
FAQ
What type of transistor is the JANKCCM2N3500-Transistor-Die?
This transistor die is a high-voltage, high-current bipolar junction transistor (BJT) designed for efficient switching and amplification in power electronics applications. It is optimized for industrial environments requiring robust performance.
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Can this transistor die handle high power dissipation?
Yes, the device supports a maximum power dissipation of 30 watts when properly mounted and cooled, making it suitable for power-intensive circuits while maintaining thermal stability.
What are the operating temperature limits for this transistor die?
The transistor die operates reliably within a junction temperature range from -65??C up to +150??C, allowing use in a broad spectrum of industrial and harsh environmental conditions.
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Is the JANKCCM2N3500-Transistor-Die suitable for high-frequency applications?
With a typical transition frequency around 3 MHz, this transistor die provides adequate performance for moderate high-frequency amplification and switching tasks, balancing speed and power handling.
How does the bare die format benefit circuit integration?
The bare die format allows designers to embed the transistor directly into hybrid circuits or custom packages, minimizing parasitic capacitances and inductances, which improves overall efficiency and signal integrity in compact assemblies.
