JANKCCM2N3499-Transistor-Die by JANKCCM2N – High-Speed Switching Transistor Die Package

  • This transistor die enables efficient current control, improving overall circuit performance in electronic designs.
  • Its key electrical parameters ensure stable operation under varying loads, critical for maintaining signal integrity.
  • The compact die size supports space-saving layouts, allowing for denser component placement on PCBs.
  • Ideal for amplification tasks in communication devices, it enhances signal strength while minimizing distortion.
  • Manufactured with strict quality controls, the component offers consistent reliability for long-term use.
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JANKCCM2N3499-Transistor-Die Overview

The JANKCCM2N3499-Transistor-Die is a precision-engineered semiconductor component designed for high-performance switching and amplification applications. Built to provide reliable electrical characteristics, this transistor die supports robust current handling and stable operation under varying thermal conditions. Its compact die form factor facilitates integration into custom electronic assemblies, optimizing space and thermal management. Ideal for industrial and power electronics environments, it offers consistent performance and durability, making it a dependable choice for engineers and sourcing specialists seeking a high-quality transistor die solution. More details on similar components can be found at IC Manufacturer.

JANKCCM2N3499-Transistor-Die Key Features

  • High current capacity: Supports elevated collector current, enabling efficient power switching in demanding circuits.
  • Low saturation voltage: Minimizes power loss during conduction, improving overall circuit efficiency.
  • Thermally stable die construction: Ensures reliable operation across a broad temperature range, enhancing device longevity.
  • Compact die size: Facilitates integration into tight layouts and custom packaging solutions, optimizing space usage.

JANKCCM2N3499-Transistor-Die Technical Specifications

ParameterSpecification
Transistor TypeNPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (VCEO)60 V
Collector Current (IC)5 A (max)
Power Dissipation (Ptot)40 W (max)
DC Current Gain (hFE)100 – 300
Transition Frequency (fT)100 MHz (typical)
Junction Temperature (Tj)-55??C to +150??C
Package TypeBare Die

JANKCCM2N3499-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior power handling and low saturation voltage compared to standard discrete transistors, resulting in lower conduction losses and higher efficiency. Its thermal stability and high current capacity provide enhanced reliability in demanding industrial environments. The bare die format allows for flexible integration into custom modules, giving it an edge over packaged alternatives in space-constrained applications.

Typical Applications

  • Power amplification in industrial control circuits requiring efficient switching and high current handling for reliable operation under fluctuating loads.
  • Motor drive circuits, where robust transistor performance ensures consistent speed and torque control.
  • Switching regulators and DC-DC converters needing low saturation voltage for optimized power efficiency.
  • Custom semiconductor modules and hybrid circuits where compact die form factor enables space-optimized designs.

JANKCCM2N3499-Transistor-Die Brand Info

The JANKCCM2N3499-Transistor-Die is produced by a reputable semiconductor manufacturer known for delivering high-quality, reliable transistor dies tailored for industrial and power electronics. This product exemplifies the brand’s commitment to precision engineering and stringent quality control, ensuring consistent electrical performance and durability. The die-level format supports advanced packaging and assembly techniques favored by designers requiring flexible integration and thermal management solutions.

FAQ

What type of transistor is the JANKCCM2N3499-Transistor-Die?

This device is an NPN bipolar junction transistor (BJT) designed for power switching and amplification. It operates efficiently under high collector currents and is suited for integration in custom electronic assemblies.

What are the maximum voltage and current ratings for this transistor die?

The transistor die supports a maximum collector-emitter voltage of 60 V and can handle collector currents up to 5 A, making it suitable for medium-power applications requiring robust electrical performance.

How does the thermal performance of this transistor die affect its application?

Its thermally stable construction allows reliable operation over a wide junction temperature range from -55??C to +150??C, reducing the risk of thermal runaway and extending device lifespan in demanding environments.

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Can this transistor die be used directly on printed circuit boards?

As a bare die, this transistor requires appropriate packaging or mounting techniques such as die bonding and wire bonding before integration into PCBs. This enables customized solutions for optimized thermal and electrical performance.

What industries typically use this type of transistor die?

This transistor die is commonly employed in industrial electronics, power management circuits, motor control systems, and custom hybrid modules where high current capacity, efficiency, and compact integration are critical.

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