JANKCCL2N3500-Transistor-Die by JANKCC | High-Performance Switching Transistor Die Package

  • This transistor die amplifies electrical signals, enabling efficient control in electronic circuits and systems.
  • Its low noise characteristic ensures clear signal processing, critical for maintaining fidelity in sensitive applications.
  • The compact die size supports high-density circuit layouts, saving valuable board space in complex assemblies.
  • Ideal for use in power management modules, it helps regulate voltage and current with stable performance.
  • Manufactured under strict quality controls, it offers consistent reliability essential for long-term device operation.
Microchip Technology-logo
产品上方询盘

JANKCCL2N3500-Transistor-Die Overview

The JANKCCL2N3500-Transistor-Die is a high-performance semiconductor component designed for efficient current amplification and switching applications. This transistor die offers robust electrical characteristics suitable for integration into advanced electronic circuits, providing reliable operation under various thermal and electrical stresses. Its compact die format ensures ease of customization and packaging flexibility, making it an ideal choice for engineers and sourcing specialists focused on precision and durability. For more detailed information and sourcing options, visit IC Manufacturer.

JANKCCL2N3500-Transistor-Die Key Features

  • High current gain: Enables efficient signal amplification, improving overall circuit performance.
  • Low saturation voltage: Reduces power losses during switching, enhancing energy efficiency.
  • Thermal stability: Maintains reliable operation across a wide temperature range, ensuring longevity and consistent performance.
  • Compact die size: Facilitates seamless integration into various packaging formats and custom assemblies.

JANKCCL2N3500-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (VCEO)350 V
Collector Current (IC)2 A
Power Dissipation (Ptot)30 W
Gain Bandwidth Product (fT)100 MHz
DC Current Gain (hFE)50 ?C 150
Junction Temperature (TJ)150??C max
Transition Frequency100 MHz
Package TypeBare Die

JANKCCL2N3500-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior voltage handling and current capacity compared to typical counterparts, reducing the need for additional components in high-voltage circuits. Its low saturation voltage contributes to higher efficiency and less heat generation, enhancing system reliability. The bare die format supports flexible packaging solutions, providing customization options that many pre-packaged transistors lack. These advantages make it a preferred choice for precision applications demanding robust performance and reliability.

Typical Applications

  • Power amplification in industrial control systems, where stable current gain and voltage tolerance are critical for operational safety and efficiency.
  • High-voltage switching circuits requiring fast response and low losses.
  • Custom semiconductor module assembly for automotive electronics.
  • Embedded electronics in energy management systems demanding compact, reliable discrete components.

JANKCCL2N3500-Transistor-Die Brand Info

The JANKCCL2N3500-Transistor-Die is produced by a leading semiconductor manufacturer specializing in high-quality transistor dies for industrial and commercial electronics. The brand emphasizes precision engineering and stringent quality controls to ensure consistent performance. This product line is known for its robust electrical characteristics and adaptability to various packaging and integration requirements, making it a trusted component among engineers and sourcing professionals.

FAQ

What is the maximum collector-emitter voltage rating of this transistor die?

The maximum collector-emitter voltage rating for this transistor die is 350 V, enabling it to handle high-voltage applications safely and reliably without breakdown.

Can this transistor die operate at high temperatures?

Yes, the transistor die supports a maximum junction temperature of 150??C, ensuring stable operation under elevated thermal conditions commonly encountered in industrial environments.

What are the typical current and power dissipation limits?

This device is rated for a collector current of up to 2 A and power dissipation of 30 W, making it suitable for medium-power amplification and switching applications.

📩 Contact Us

产品中间询盘

Is the product supplied as a packaged transistor or bare die?

The product is provided as a bare transistor die, allowing engineers to integrate it into custom packages or modules tailored to specific application requirements.

What kind of applications is this transistor die best suited for?

It is ideal for power amplification, high-voltage switching, automotive electronics, and embedded energy management systems where precision, reliability, and thermal stability are essential.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?