JANKCCH2N3501-Transistor-Die by JANKCCH2N3501 ?C High-Performance Switching Transistor Die

  • This transistor die enables efficient switching and amplification, improving circuit responsiveness and control.
  • Its maximum voltage rating ensures safe operation under high-stress conditions, preventing device failure.
  • The compact die size allows integration in space-constrained designs, optimizing board layout and weight.
  • Ideal for power management modules, it enhances energy regulation and thermal performance in electronic systems.
  • Manufactured with rigorous quality controls, it offers consistent performance and long-term reliability in applications.
Microchip Technology-logo
产品上方询盘

JANKCCH2N3501-Transistor-Die Overview

The JANKCCH2N3501-Transistor-Die is a precision semiconductor component designed for integration into high-performance electronic circuits. As a fundamental switching element, this transistor die provides reliable current amplification and switching functions essential for industrial, automotive, and power management applications. Featuring a robust die structure optimized for efficient heat dissipation and electrical stability, it supports improved reliability under varied operating conditions. Engineers and sourcing specialists benefit from its consistent electrical characteristics and compatibility with standard assembly processes. For more detailed specifications and sourcing options, visit IC Manufacturer.

JANKCCH2N3501-Transistor-Die Key Features

  • High Current Handling Capability: Enables efficient control of substantial load currents, reducing the need for additional amplification stages.
  • Optimized Die Size: Facilitates integration into compact electronic modules without compromising thermal performance.
  • Excellent Switching Speed: Supports rapid on/off transitions, crucial for high-frequency applications and power conversion systems.
  • Robust Electrical Parameters: Ensures stable operation across a wide voltage and temperature range, enhancing device reliability and longevity.

JANKCCH2N3501-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)350V
Collector Current (IC)3.0A
Power Dissipation (PD)40W
Transition Frequency (fT)4MHz
Gain Bandwidth Product4MHz
Junction Temperature (TJ)150??C
DC Current Gain (hFE)40?C160??
Collector-Base Voltage (VCBO)350V

JANKCCH2N3501-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior voltage tolerance and current capacity compared to typical alternatives, ensuring enhanced reliability in demanding environments. Its efficient switching characteristics reduce power loss, benefiting energy-sensitive industrial applications. Additionally, the optimized die design contributes to better thermal management, extending device lifespan and maintaining consistent performance under stress.

Typical Applications

  • Power Amplification in Industrial Motor Drives: Provides reliable current control and switching for efficient motor operation and protection.
  • Switching Elements in Power Supply Units: Supports rapid switching cycles to improve overall power conversion efficiency.
  • Automotive Electronics: Used for robust control of various subsystems requiring high voltage and current handling.
  • Signal Amplification in Communication Devices: Enables fast switching and amplification for stable signal processing.

JANKCCH2N3501-Transistor-Die Brand Info

The JANKCCH2N3501-Transistor-Die is a product from a trusted semiconductor brand known for delivering high-quality transistor dies engineered for industrial-grade applications. This offering reflects the brand??s commitment to precision manufacturing and rigorous quality control, ensuring consistent electrical parameters and durability. It is designed to meet the stringent demands of professional engineers seeking reliable components for integration into a variety of electronic systems.

FAQ

What is the maximum collector-emitter voltage rating of this transistor die?

The maximum collector-emitter voltage rating is 350 volts, which allows the device to operate safely in high-voltage circuits without risk of breakdown under normal conditions.

What current levels can this transistor die handle continuously?

This transistor die supports a continuous collector current of up to 3.0 amperes, suitable for moderate power applications requiring stable current handling.

How does the thermal performance of this transistor die impact its reliability?

The die is engineered to dissipate heat efficiently, maintaining junction temperatures up to 150??C. This thermal management capability helps prevent overheating and prolongs the operational life of the device.

📩 Contact Us

产品中间询盘

Is this transistor die suitable for high-frequency switching applications?

With a transition frequency of approximately 4 MHz, it is capable of supporting moderate high-frequency switching, making it appropriate for power supply switching and signal amplification tasks.

What is the typical gain range for this transistor die?

The DC current gain (hFE) typically ranges from 40 to 160, providing flexible amplification characteristics suitable for varying circuit requirements.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?