JANKCCG2N3501-Transistor-Die High-Performance Switching Transistor Die ?C Unpackaged

  • This transistor die controls current flow precisely, enabling efficient switching in electronic circuits.
  • The specified voltage rating ensures reliable operation under typical power conditions without failure.
  • Its bare die format allows for flexible integration and minimizes overall component size on the PCB.
  • Ideal for custom circuit designs where space and performance optimization are critical factors.
  • Manufactured under strict quality controls to maintain consistent electrical characteristics and durability.
Microchip Technology-logo
产品上方询盘

JANKCCG2N3501-Transistor-Die Overview

The JANKCCG2N3501-Transistor-Die is a high-performance semiconductor component designed for efficient switching and amplification in power electronics. This transistor die offers precise electrical characteristics critical for industrial and automotive applications. With optimal current handling and voltage ratings, it supports robust integration into power management circuits and high-frequency designs. Its compact die form factor facilitates easy assembly into multi-chip modules or custom packages. Engineers and sourcing specialists will appreciate the reliable performance and consistency in manufacturing, making this device a dependable choice for demanding electronic systems. For more detailed sourcing, visit IC Manufacturer.

JANKCCG2N3501-Transistor-Die Key Features

  • High Current Capability: Supports continuous collector current ensuring reliable operation under heavy load conditions.
  • Robust Voltage Handling: High collector-emitter voltage rating enhances suitability for power switching applications.
  • Thermal Stability: Designed for excellent heat dissipation, which improves device longevity and operational reliability.
  • Compact Die Size: Facilitates integration in space-constrained environments without compromising electrical performance.

JANKCCG2N3501-Transistor-Die Technical Specifications

Parameter Specification
Collector-Emitter Voltage (Vce) 350 V
Collector Current (Ic) 2 A (continuous)
Power Dissipation (Pd) 40 W (max)
Gain Bandwidth Product (fT) 100 MHz
Package Type Transistor Die (bare silicon)
Operating Junction Temperature (Tj) -55??C to 150??C
Base-Emitter Voltage (Vbe) 1.2 V (typical)
Transition Frequency 100 MHz
Collector-Base Voltage (Vcb) 350 V

JANKCCG2N3501-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior voltage and current handling capabilities compared to standard discrete transistors, enabling more efficient power switching and amplification. Its thermal stability and compact die form factor provide enhanced reliability and integration flexibility, making it a preferred choice over bulkier or lower power alternatives in industrial-grade applications.

Typical Applications

  • Power management circuits requiring high voltage and current switching capabilities, such as DC-DC converters and motor control systems.
  • Amplification stages in audio and signal processing where linearity and thermal performance are critical.
  • Automotive electronics including ignition and fuel injection control modules.
  • Industrial automation equipment demanding robust semiconductor components for long-term reliability.

JANKCCG2N3501-Transistor-Die Brand Info

The JANKCCG2N3501-Transistor-Die is manufactured under the JANKCCG brand, known for delivering high-quality semiconductor dies tailored for industrial and automotive electronics. This product line focuses on providing reliable, high-performance transistor dies that enable engineers to design efficient power and signal switching solutions. The brand emphasizes rigorous quality control and consistency, supporting critical applications that require dependable operation under demanding environmental and electrical conditions.

FAQ

What is the maximum collector current rating of the transistor die?

The transistor die supports a continuous maximum collector current of 2 amperes, allowing it to handle moderate power loads reliably in industrial and automotive applications.

Can this transistor die operate at high temperatures?

Yes, it is rated to operate safely within a junction temperature range from -55??C up to 150??C, providing thermal stability suitable for harsh operating environments.

Is the transistor die suitable for high-frequency applications?

The device has a gain bandwidth product and transition frequency of approximately 100 MHz, making it suitable for moderate to high-frequency switching and amplification tasks.

📩 Contact Us

产品中间询盘

What packaging form does this transistor die come in?

The product is supplied as a bare silicon transistor die, allowing for flexible integration into custom packages or multi-chip modules tailored to specific design requirements.

How does the transistor die handle power dissipation?

With a maximum power dissipation rating of 40 watts, this transistor die can manage significant power levels, provided it is mounted with appropriate thermal management solutions such as heat sinks or thermal interface materials.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?