JANKCCG2N3499-Transistor-Die by JANKCCG2N | High-Performance Amplifier Die Package

  • This transistor die efficiently controls current flow, enabling precise signal amplification in electronic circuits.
  • Its compact die size supports integration into dense circuit designs, saving valuable board space.
  • The device suits switching applications, helping to improve response times and overall system performance.
  • Designed for reliable operation under varied conditions, it ensures long-term stability and consistent behavior.
  • JANKCCG2N3499-Transistor-Die offers a balance of power handling and thermal management for diverse electronic uses.
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产品上方询盘

JANKCCG2N3499-Transistor-Die Overview

The JANKCCG2N3499-Transistor-Die is a high-performance semiconductor component designed for efficient signal amplification and switching applications. Engineered with precision die fabrication techniques, it offers reliable electrical characteristics suitable for industrial and commercial electronics. This device supports robust current handling and optimized gain performance, making it ideal for integration in power management, amplification circuits, and signal processing modules. The die format allows for flexible custom packaging options, enhancing design adaptability in compact or high-density assemblies. For detailed manufacturing and sourcing information, visit IC Manufacturer.

JANKCCG2N3499-Transistor-Die Key Features

  • High Current Handling Capability: Supports collector currents that enable effective power amplification in various electronic circuits.
  • Optimized Gain Performance: Ensures consistent signal amplification with a stable forward current gain, improving overall circuit reliability.
  • Thermal Stability: Designed for enhanced heat dissipation at the die level to maintain performance under elevated temperature conditions.
  • Compact Die Size: Facilitates integration into custom packages, allowing designers flexibility for space-constrained applications.

JANKCCG2N3499-Transistor-Die Technical Specifications

ParameterValue
Collector-Emitter Voltage (VCEO)60 V
Collector Current (IC)15 A
Power Dissipation (Ptot)25 W
Transition Frequency (fT)100 MHz
Forward Current Gain (hFE)40 to 320
Junction Temperature (TJ)150 ??C
Package TypeDie (custom packaging required)
Base-Emitter Voltage (VBE)1.2 V (typical)

JANKCCG2N3499-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers a superior combination of high current capacity and stable gain compared to standard packaged transistors. Its thermal resilience at the die level improves reliability in demanding environments, while the open-die format allows designers to optimize thermal and electrical integration. These attributes make it advantageous for applications requiring precision amplification and power efficiency without compromising on size or heat management.

Typical Applications

  • Power Amplification: Suitable for use in power amplifier stages where high current and voltage handling are critical, enabling efficient signal boosting in industrial equipment.
  • Switching Circuits: Used in power switching applications where fast response and robustness under high load are necessary.
  • Signal Processing Modules: Ideal for circuits requiring stable gain and low distortion for precise analog signal control.
  • Custom Semiconductor Packaging: Enables integration into tailored packages for specialized electronic modules and high-density PCB assemblies.

JANKCCG2N3499-Transistor-Die Brand Info

The JANKCCG2N3499-Transistor-Die is produced by a leading semiconductor manufacturer known for delivering high-quality discrete components tailored for industrial and commercial electronics. This product line emphasizes precision die fabrication and consistent electrical characteristics, supporting engineers and sourcing specialists with reliable components for their design and manufacturing needs. The brand??s commitment to quality and innovation ensures the transistor die meets stringent performance standards for modern electronic systems.

FAQ

What is the maximum collector current rating for the JANKCCG2N3499-Transistor-Die?

The transistor die supports a maximum collector current of 15 amperes, making it suitable for applications requiring significant power handling capability without sacrificing performance.

Can the die be used directly on a PCB without additional packaging?

No, the transistor is provided as a bare die and requires appropriate packaging or mounting solutions to ensure proper electrical connections and thermal management on a PCB.

What voltage levels is this transistor die designed to handle?

It is rated for a collector-emitter voltage up to 60 volts, which allows its deployment in circuits operating within moderate voltage ranges common in industrial and commercial electronics.

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产品中间询盘

How does the die format benefit custom electronic designs?

The die format allows engineers to integrate the transistor into custom packages or multi-chip modules, optimizing size, thermal performance, and electrical layout tailored to specific application requirements.

What thermal limits should be considered when using this transistor die?

The device has a maximum junction temperature of 150 ??C. Proper heat dissipation methods must be implemented to maintain safe operating temperatures and ensure long-term reliability.

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