JANKCCG2N3498-Transistor-Die by JANKCCG2N | High-Speed Switching Transistor Die Package

  • This transistor die controls electrical current flow, enabling efficient signal amplification in circuits.
  • Its low leakage characteristic ensures stable operation and reduces power loss during use.
  • The compact die size supports high-density circuit designs, saving valuable board space.
  • Ideal for use in precision analog circuits where accurate current switching improves overall device performance.
  • Manufactured under strict quality standards to maintain consistent performance and long-term reliability.
Microchip Technology-logo
产品上方询盘

JANKCCG2N3498-Transistor-Die Overview

The JANKCCG2N3498-Transistor-Die is a high-performance semiconductor component designed for efficient signal amplification and switching applications. This transistor die features robust electrical characteristics suitable for industrial and consumer electronics requiring precise control of current flow. With its optimized die layout and material composition, it ensures enhanced thermal stability and electrical reliability. The compact form factor facilitates easy integration into complex circuits, making it an ideal choice for engineers focused on device miniaturization and performance consistency. For sourcing and technical data, visit the IC Manufacturer website.

JANKCCG2N3498-Transistor-Die Key Features

  • High current gain: Enables efficient amplification, reducing power loss and improving signal strength in switching applications.
  • Low saturation voltage: Minimizes voltage drop across the device, enhancing overall energy efficiency in circuits.
  • Thermal stability: Designed to maintain performance under varying temperature conditions, ensuring reliable operation in industrial environments.
  • Compact die size: Supports high-density PCB designs without compromising electrical performance or heat dissipation.

JANKCCG2N3498-Transistor-Die Technical Specifications

ParameterSpecification
TypeNPN Bipolar Junction Transistor (BJT) Die
Collector-Emitter Voltage (VCEO)40 V
Collector Current (IC)2 A
Gain Bandwidth Product (fT)100 MHz
DC Current Gain (hFE)100 – 300
Power Dissipation1 W (die level)
Saturation Voltage (VCE(sat))0.3 V (typical)
Operating Temperature Range-55??C to +150??C
Package TypeBare Die (transistor die form factor)

JANKCCG2N3498-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior thermal stability and low saturation voltage compared to typical alternatives, resulting in enhanced reliability and energy efficiency. Its high current gain and compact die size allow for better integration in space-constrained designs while maintaining consistent electrical performance. These strengths make it a preferred choice for applications demanding precise switching and amplification under varied environmental conditions.

Typical Applications

  • Power amplification circuits in industrial control systems where efficient current handling and thermal management are critical for sustained operation.
  • Switching devices in automotive electronics requiring robust performance under temperature extremes and vibration.
  • Signal amplification in communication equipment that demands high-frequency response and low noise.
  • Embedded systems and sensor interfaces where compact transistor die integration supports miniaturization without sacrificing electrical characteristics.

JANKCCG2N3498-Transistor-Die Brand Info

The JANKCCG2N3498-Transistor-Die is manufactured by a leading semiconductor company specializing in high-quality transistor dies for industrial and commercial applications. The brand is recognized for its rigorous quality control and advanced fabrication processes that ensure consistent device performance. This product reflects the company’s commitment to delivering reliable, high-efficiency components tailored to meet the stringent demands of modern electronics design and manufacturing.

FAQ

What are the primary electrical characteristics of this transistor die?

This transistor die operates with a collector-emitter voltage rating up to 40 V and supports collector currents up to 2 A. It features a typical DC current gain between 100 and 300 and a gain bandwidth product of 100 MHz, making it suitable for medium-power amplification and switching tasks.

How does the device ensure thermal stability in demanding applications?

The transistor die??s design incorporates materials and structural elements optimized for heat dissipation at the die level, enabling it to maintain stable operation across a temperature range from -55??C to +150??C. This enhances reliability in environments with fluctuating temperatures.

Is this transistor die suitable for high-frequency circuit designs?

Yes, with a gain bandwidth product of 100 MHz, this transistor die supports high-frequency switching and amplification, making it appropriate for communication and signal processing circuits requiring fast response times.

📩 Contact Us

产品中间询盘

Can this transistor die be integrated into compact PCB layouts?

Absolutely. The bare die format and compact size allow for tight integration in high-density PCB designs, supporting modern miniaturization demands without compromising electrical or thermal performance.

What types of applications typically use this transistor die?

This transistor die is commonly found in industrial power amplifiers, automotive switching circuits, communication equipment, and embedded systems where reliability, efficiency, and compactness are crucial.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?