JANKCCF2N3501-Transistor-Die Overview
The JANKCCF2N3501-Transistor-Die is a high-performance semiconductor component designed for efficient switching and amplification in electronic circuits. Engineered with precision, this transistor die offers robust electrical characteristics suitable for power management and signal processing applications. Its compact die form enables easy integration into custom packaging and hybrid modules, making it ideal for engineers and sourcing specialists focused on reliability and performance. Manufactured by IC Manufacturer, this transistor die meets stringent quality and consistency standards required in industrial and commercial electronics.
JANKCCF2N3501-Transistor-Die Key Features
- High voltage tolerance: Supports collector-emitter voltages up to 350V, ensuring reliable operation in demanding power applications.
- Robust current handling: Capable of continuous collector current of 2A, providing substantial load-driving capability for industrial circuits.
- Low saturation voltage: Minimizes power loss and heat generation during conduction, enhancing overall efficiency.
- Compact die size: Facilitates flexible integration into various packaging solutions, enabling customized assembly for diverse applications.
JANKCCF2N3501-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 350 | V |
| Collector Current Continuous (Ic) | 2 | A |
| Power Dissipation (Pd) | 30 | W |
| Transition Frequency (ft) | 30 | MHz |
| DC Current Gain (hFE) | 40 – 160 | ?C |
| Collector-Base Voltage (Vcbo) | 350 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Operating Junction Temperature (Tj) | -65 to +150 | ??C |
JANKCCF2N3501-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage and current handling compared to typical alternatives, enhancing circuit robustness and durability. Its low saturation voltage reduces thermal stress, improving energy efficiency and reliability. The compact die size allows for flexible integration in bespoke packaging, offering sourcing specialists streamlined assembly options without compromising performance or longevity.
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Typical Applications
- Power switching circuits in industrial control systems, where high voltage and current capacity are essential for reliable operation and long-term stability.
- Signal amplification stages requiring consistent gain and fast switching response.
- Hybrid integrated circuits that benefit from compact transistor die form for custom module assembly.
- General purpose transistor applications in consumer electronics and automotive control units.
JANKCCF2N3501-Transistor-Die Brand Info
The JANKCCF2N3501-Transistor-Die is a premium product from IC Manufacturer, known for delivering semiconductor components with precise electrical characteristics and high reliability. This transistor die undergoes rigorous quality control to meet industrial standards, ensuring consistent performance across batches. The brand emphasizes innovation in semiconductor fabrication processes, providing engineers and sourcing specialists with components that support advanced electronic designs and efficient manufacturing workflows.
FAQ
What are the maximum voltage and current limits for this transistor die?
The transistor die supports a maximum collector-emitter voltage of 350 volts and a continuous collector current of 2 amperes, making it suitable for moderate power applications requiring robust electrical performance.
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Can this transistor die be integrated into custom packaging solutions?
Yes, the compact die size and standardized die format allow flexible integration into various packaging options, including hybrid modules and custom assemblies, facilitating diverse application requirements.
What temperature range can the transistor die operate within?
This device operates reliably across a junction temperature range from -65??C up to +150??C, ensuring performance in both low-temperature and high-temperature industrial environments.
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How does the transistor die??s gain compare for different operating conditions?
The DC current gain (hFE) ranges from 40 to 160 depending on collector current and temperature, providing stable amplification characteristics across typical operating conditions.
Is this transistor die suitable for high-frequency switching applications?
With a transition frequency of approximately 30 MHz, this transistor die is capable of handling moderate high-frequency switching, making it appropriate for many signal processing and amplification tasks.
