JANKCCF2N3500-Transistor-Die High-Power NPN Transistor Die for Semiconductor Packaging

  • This transistor die enables efficient signal amplification, improving circuit performance in electronic designs.
  • Its electrical characteristics support stable operation under varying load conditions, ensuring consistent output.
  • The compact die size facilitates integration into space-constrained assemblies, aiding in miniaturized device manufacturing.
  • Ideal for use in power regulation circuits where precise control enhances overall system efficiency and response.
  • Manufactured with rigorous quality controls to maintain reliability and long-term operational stability in diverse environments.
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产品上方询盘

JANKCCF2N3500-Transistor-Die Overview

The JANKCCF2N3500-Transistor-Die is a high-performance semiconductor component designed for efficient power switching applications. This transistor die offers robust electrical characteristics, enabling reliable operation in demanding industrial environments. It features a high voltage rating and low on-resistance, making it suitable for integration into compact power modules and high-frequency circuits. With precise fabrication and proven reliability, this transistor die supports engineers and sourcing specialists seeking durable and efficient components. For more details, visit IC Manufacturer.

JANKCCF2N3500-Transistor-Die Key Features

  • High Voltage Capability: Supports up to 3500 V, enabling use in high-voltage switching and power conversion circuits.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses, increasing overall system efficiency and thermal management.
  • Compact Die Size: Facilitates integration into dense electronic assemblies, optimizing board space and aiding miniaturization.
  • Robust Thermal Performance: Ensures reliable operation under elevated temperatures, critical for industrial and automotive applications.

JANKCCF2N3500-Transistor-Die Technical Specifications

ParameterSpecification
Transistor TypeN-Channel MOSFET
Maximum Drain-Source Voltage (VDS)3500 V
Continuous Drain Current (ID)Specified by die rating (refer to detailed datasheet)
On-Resistance (RDS(on))Low, optimized for reduced conduction losses
Gate Charge (Qg)Optimized for fast switching
Operating Temperature RangeIndustrial standard -40??C to +150??C
Die DimensionsCompact for integration
Package TypeDie form (bare silicon transistor)

JANKCCF2N3500-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior voltage handling and low on-resistance compared to typical transistor dies, resulting in higher efficiency and lower heat dissipation. Its compact size allows easier integration into advanced power modules, while robust thermal limits enhance system reliability. Compared to standard options, this device delivers improved switching performance, making it ideal for demanding industrial and power electronics designs.

Typical Applications

  • High-voltage power converters and inverters used in industrial motor drives, where efficient switching and thermal stability are critical for reliable operation.
  • Power management modules in renewable energy systems, such as solar inverters and wind turbine controllers.
  • Switching elements in uninterruptible power supplies (UPS) requiring rapid response and high voltage tolerance.
  • Automotive power electronics circuits demanding compact, reliable transistor dies for electric vehicle controllers and battery management systems.

JANKCCF2N3500-Transistor-Die Brand Info

The JANKCCF2N3500-Transistor-Die is produced by a leading semiconductor manufacturer specializing in high-voltage MOSFET technologies. This brand is recognized for precision-engineered transistor dies that meet stringent industrial standards, ensuring consistent performance and longevity. The product line focuses on delivering components optimized for power switching and energy-efficient electronic designs, supporting engineers in achieving robust and compact solutions.

FAQ

What is the maximum voltage rating of the JANKCCF2N3500-Transistor-Die?

This transistor die is rated for a maximum drain-source voltage of 3500 volts, making it suitable for high-voltage power switching applications in industrial and automotive systems.

How does the on-resistance of this transistor die affect system performance?

Low on-resistance reduces power losses during conduction, improving overall system efficiency and reducing thermal stress on the device, which enhances reliability and longevity in operation.

Can this transistor die operate reliably at high temperatures?

Yes, the device supports an operating temperature range typically from -40??C up to +150??C, ensuring stable performance in harsh environments common in industrial and automotive applications.

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产品中间询盘

Is the JANKCCF2N3500 available as a packaged transistor or only as a bare die?

This product is provided as a bare transistor die, allowing for custom packaging and integration into specialized power modules or advanced semiconductor assemblies.

What types of applications benefit most from using this transistor die?

Applications involving high-voltage power conversion, such as motor drives, renewable energy inverters, UPS systems, and automotive power electronics, benefit significantly from the high voltage capability and low conduction losses of this transistor die.

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