JANKCCD2N5151-Transistor-Die NPN Power Transistor Chip – Bare Die Package

JANKCCD2N5151-Transistor-Die Overview

The JANKCCD2N5151-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for integration into semiconductor modules and custom assemblies. It delivers reliable switching and amplification capabilities with excellent current handling and voltage ratings, making it suitable for industrial power control and signal processing applications. This transistor die offers robust electrical characteristics that support efficient energy conversion and thermal management. Engineers and sourcing specialists benefit from its compact die form factor, enabling flexible packaging options and streamlined manufacturing processes. For detailed product sourcing and technical support, visit IC Manufacturer.

JANKCCD2N5151-Transistor-Die Technical Specifications

JANKCCD2N5151-Transistor-Die Key Features

• High voltage tolerance: Supports up to 120 V collector-emitter voltage, ensuring robust performance in power switching applications.
• High current capacity: Handles collector current up to 8 A, suitable for medium power amplification and control circuits.
• Wide operating temperature range: Reliable function between -65??C and +150??C enhances thermal stability in demanding environments.
• High current gain: Gain range of 50 to 200 allows efficient signal amplification with minimal base current input.
• Fast switching speed: Transition frequency of 100 MHz supports high-frequency operation for communication and control systems.
• Bare die format: Enables custom packaging and integration flexibility for semiconductor manufacturers and module designers.
• Power dissipation capability: Typical power dissipation of 75 W ensures durability under continuous load conditions.

Typical Applications

• Power management circuits requiring robust medium-power switching in industrial automation and motor control systems.
• Signal amplification stages in audio and radio frequency equipment where precision gain and stability are essential.
• Custom semiconductor module manufacturing for specialized power electronics applications.
• High-frequency switching applications in telecommunication infrastructure and control electronics.

JANKCCD2N5151-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior voltage handling and current capacity compared to many generic alternatives, making it ideal for demanding industrial and power applications. Its wide operating temperature range and high current gain enhance reliability and efficiency in harsh environments. The bare die format provides greater flexibility for custom integration, reducing assembly complexity and improving thermal management over packaged transistors.

JANKCCD2N5151-Transistor-Die Brand Info

The JANKCCD2N5151-Transistor-Die is produced under the JANKCCD series, known for delivering rugged bipolar junction transistor dies tailored for industrial and power electronics sectors. This product line is recognized for precision manufacturing, stringent quality control, and consistency in electrical performance. The brand focuses on supplying semiconductor components that support advanced power management and signal processing needs for OEMs and semiconductor module manufacturers worldwide.

FAQ

What is the maximum collector-emitter voltage rating of this transistor die?

The maximum collector-emitter voltage (V_CEO) rating for this transistor die is 120 volts, enabling it to operate safely in medium-power switching and amplification applications without risk of breakdown.