JANKCCD2N3501-Transistor-Die Overview
The JANKCCD2N3501-Transistor-Die is a high-performance semiconductor component designed for precision amplification and switching applications. This transistor die offers reliable electrical characteristics with stable gain and voltage handling capabilities. Its compact die format facilitates seamless integration into custom electronic assemblies and power modules. Engineered for robust operation under varying thermal and electrical conditions, this device ensures consistent performance in demanding industrial environments. Sourcing specialists and design engineers benefit from its proven semiconductor technology, enabling efficient circuit design and improved system reliability. For detailed sourcing and technical support, visit IC Manufacturer.
JANKCCD2N3501-Transistor-Die Key Features
- High current capacity: Supports substantial collector current allowing for effective switching and amplification in power circuits.
- Stable voltage parameters: Ensures consistent operation with reliable collector-emitter voltage rating, critical for circuit protection.
- Optimized die size: Facilitates integration into compact semiconductor packages or hybrid modules, reducing board space requirements.
- Robust thermal performance: Maintains operational stability with efficient heat dissipation characteristics, improving device longevity.
JANKCCD2N3501-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector Current (IC) | 2.5 A |
| Power Dissipation (PD) | 30 W |
| DC Current Gain (hFE) | 40 to 160 |
| Transition Frequency (fT) | 30 MHz |
| Base-Emitter Voltage (VBE) | 1.2 V |
| Operating Temperature Range | -65??C to +150??C |
| Die Dimensions | Approx. 3.2 mm x 3.2 mm |
JANKCCD2N3501-Transistor-Die Advantages vs Typical Alternatives
This die offers improved reliability and consistent gain across a wide temperature range compared to typical transistor dies. Its robust voltage and current ratings enable enhanced power handling, making it suitable for high-demand industrial circuits. The compact die size allows easier integration without compromising performance, providing engineers with a versatile solution that combines efficiency and durability in semiconductor applications.
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Typical Applications
- Power amplification in industrial control systems, where stable gain and high current capacity are critical for reliable signal processing.
- Switching devices in power supplies, benefiting from the high collector-emitter voltage capability to manage voltage spikes.
- Audio amplifier stages requiring precise transistor gain and frequency response characteristics.
- General-purpose electronic modules demanding compact transistor dies with proven thermal endurance.
JANKCCD2N3501-Transistor-Die Brand Info
This transistor die is produced by a reputable semiconductor brand specializing in industrial-grade electronic components. The product line focuses on delivering reliable, high-performance transistor dies suitable for integration into power and signal amplification circuits. Known for stringent quality control and consistency, the brand supports design engineers and sourcing specialists with comprehensive datasheets and technical assistance to ensure optimal utilization in demanding applications.
FAQ
What is the maximum collector current supported by this transistor die?
The maximum collector current for this transistor die is 2.5 amperes, enabling it to handle moderate to high current loads in various amplification and switching applications without compromising performance.
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Can the transistor die operate at high temperatures?
Yes, the device operates reliably within a temperature range from -65??C up to +150??C, making it suitable for use in environments with significant thermal variation.
What are the key voltage ratings of the transistor die?
The collector-emitter voltage (VCEO) is rated at 100 volts, which allows the transistor to withstand typical voltage stresses encountered in power control and switching circuits.
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How does the die size impact integration into electronic modules?
The approximate die dimensions of 3.2 mm by 3.2 mm provide a compact footprint, allowing efficient use of circuit board space and facilitating integration into hybrid or custom semiconductor packages.
What is the typical range of DC current gain (hFE) for this transistor?
The DC current gain varies between 40 and 160, enabling designers to select this transistor for applications requiring moderate to high amplification factors with reliable linearity.
