JANKCCD2N3500-Transistor-Die Overview
The JANKCCD2N3500-Transistor-Die is a high-performance semiconductor component designed for efficient power switching and amplification in industrial electronics. Engineered with precision, it offers reliable electrical characteristics suitable for demanding applications requiring robust operation under varying thermal and electrical stresses. This transistor die is optimized for integration into custom assemblies and power modules, enhancing system efficiency and durability. Available through IC Manufacturer, it supports engineers and sourcing specialists seeking a reliable semiconductor die for tailored electronics manufacturing.
JANKCCD2N3500-Transistor-Die Key Features
- High voltage tolerance: Supports up to 350 volts, enabling use in high-power circuits without compromising device integrity.
- Robust current handling: Capable of continuous collector currents up to 2.0 amperes, ensuring dependable performance in power amplification tasks.
- Low saturation voltage: Minimizes power losses and heat generation, improving overall energy efficiency in switching applications.
- Compact die size: Facilitates integration into multi-chip modules and custom PCB layouts, offering design flexibility for complex electronics systems.
JANKCCD2N3500-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCE) | 350 V |
| Collector Current (IC) | 2.0 A |
| Power Dissipation (PD) | 20 W |
| Gain Bandwidth Product (fT) | 100 MHz |
| Collector-Base Voltage (VCB) | 400 V |
| Emitter-Base Voltage (VEB) | 5 V |
| Operating Junction Temperature (Tj) | -65??C to +150??C |
| Package Type | Bare die (transistor die) |
JANKCCD2N3500-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage and current handling compared to many standard alternatives, supporting higher power operation with enhanced reliability. Its low saturation voltage reduces conduction losses, improving circuit efficiency. The compact die format provides flexibility for integration into custom power modules, offering a distinct advantage in space-constrained designs requiring robust electrical performance.
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Typical Applications
- Power amplification in industrial control circuits where high voltage and current handling ensure stable operation and performance longevity.
- Switching components in power supply units for efficient energy conversion and thermal management.
- Integration within custom semiconductor modules requiring precise transistor dies for tailored electronic solutions.
- Use in motor control circuits, supporting reliable switching and amplification under dynamic electrical conditions.
JANKCCD2N3500-Transistor-Die Brand Info
The JANKCCD2N3500-Transistor-Die is produced by a leading semiconductor manufacturer specializing in high-quality transistor dies designed for industrial and power electronics. This brand emphasizes stringent quality control and advanced manufacturing processes to deliver components that meet the rigorous demands of modern electronic systems. With a focus on reliability and performance, the product line supports engineers and OEMs in developing efficient, durable electronic applications.
FAQ
What type of transistor is the JANKCCD2N3500-Transistor-Die?
The device is a high-voltage bipolar junction transistor (BJT) die designed for power switching and amplification. It supports collector-emitter voltages up to 350 volts and continuous collector currents of 2.0 amperes, making it suitable for industrial electronics applications.
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Can the transistor die be integrated directly into PCB assemblies?
Yes, as a bare transistor die, it is intended for integration into custom modules or assemblies. Proper handling and packaging considerations are necessary to protect the die and ensure reliable electrical connections within the final product.
What are the thermal operating limits of this transistor die?
The transistor die supports an operating junction temperature range from -65??C up to +150??C, allowing it to function reliably in harsh industrial environments with variable thermal conditions.
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How does the low saturation voltage benefit system design?
Lower saturation voltage reduces power dissipation within the transistor during conduction, leading to improved energy efficiency and reduced heat generation. This enhances overall system reliability and may reduce the need for extensive thermal management.
Is this device suitable for high-frequency applications?
With a gain bandwidth product of around 100 MHz, this transistor die is capable of operating effectively in moderate to high-frequency circuits, making it versatile for various amplification and switching tasks within industrial electronics.
