JANKCCD2N3499-Transistor-Die High-Performance Switching Transistor Chip Package

  • This transistor die controls current flow efficiently, enabling precise signal amplification in electronic circuits.
  • It operates within specified voltage limits to ensure stable performance under varying electrical conditions.
  • The compact die size aids in minimizing board space, supporting dense circuit designs and easier integration.
  • Ideal for use in power regulation modules, it enhances energy management and reduces thermal stress.
  • Manufactured with strict quality controls to maintain consistent electrical characteristics and long-term reliability.
Microchip Technology-logo
产品上方询盘

JANKCCD2N3499-Transistor-Die Overview

The JANKCCD2N3499-Transistor-Die is a high-performance semiconductor component designed for integration into power amplification and switching circuits. This transistor die offers reliable electrical characteristics, ensuring precise control of current flow in compact applications. With a robust construction and optimized doping profiles, it delivers consistent gain and voltage handling capabilities. Ideal for engineers and sourcing specialists requiring a bare die for customized packaging or hybrid module assembly, this product reflects the quality standards upheld by IC Manufacturer. Its compatibility with various industrial applications makes it a versatile choice for power electronics design.

JANKCCD2N3499-Transistor-Die Key Features

  • High current gain: Provides efficient amplification, reducing the need for additional stage components and enhancing circuit compactness.
  • Robust voltage tolerance: Supports high collector-emitter voltages, ensuring stable operation in demanding power switching applications.
  • Low saturation voltage: Minimizes power dissipation and improves overall energy efficiency in switching tasks.
  • Die-level format: Enables flexible integration into custom semiconductor modules or hybrid circuits, optimizing footprint and thermal management.

JANKCCD2N3499-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)80V
Collector Current (IC)10A
Current Gain (hFE)60?C320?C
Power Dissipation (Ptot)50W (die level)
Transition Frequency (fT)100MHz
Base-Emitter Voltage (VBE)1.2V
Package TypeUnpackaged Die?C
Operating Temperature Range-65 to +150??C

JANKCCD2N3499-Transistor-Die Advantages vs Typical Alternatives

This transistor die provides superior current gain and voltage handling in a bare die format, enabling more compact and efficient power electronic designs than traditional packaged transistors. Its low saturation voltage reduces conduction losses, improving overall circuit efficiency. The ability to integrate directly into custom modules enhances thermal management and reliability, making it a preferred option over standard discrete transistors for industrial and high-reliability applications.

Typical Applications

  • Power amplifier stages in industrial control systems, where high current gain and voltage tolerance are essential for reliable signal amplification.
  • Switching elements in power converters, enabling efficient energy transfer with minimal losses.
  • Custom semiconductor modules requiring bare die integration for optimized thermal performance and miniaturization.
  • High-frequency switching circuits that benefit from the device??s high transition frequency and stable electrical characteristics.

JANKCCD2N3499-Transistor-Die Brand Info

The JANKCCD2N3499-Transistor-Die is part of IC Manufacturer??s portfolio of reliable semiconductor components designed for industrial and power electronics markets. Known for stringent quality control and consistency, this brand ensures that each die meets exacting performance standards suitable for demanding engineering applications. The product supports customization and integration flexibility, catering to advanced design requirements in the semiconductor supply chain.

FAQ

What is the maximum collector current rating of this transistor die?

The maximum collector current is rated at 10 amperes, allowing the device to handle substantial current loads typical in power amplification and switching applications.

Can this transistor die operate at high frequencies?

Yes, it features a transition frequency of approximately 100 MHz, making it suitable for high-frequency switching and amplifier circuits.

Is this component supplied in a packaged form?

No, it is provided as an unpackaged bare die, intended for integration into custom packages or hybrid circuits by the end user or module manufacturers.

📩 Contact Us

产品中间询盘

What temperature range can the transistor die reliably operate within?

The device is rated for operation across a wide temperature range from -65??C to +150??C, supporting use in harsh industrial environments.

How does the low saturation voltage benefit power applications?

A low saturation voltage reduces power losses during conduction, improving energy efficiency and thermal performance in power switching and amplification tasks.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?