JANKCC2N5151-Transistor-Die Overview
The JANKCC2N5151-Transistor-Die is a precision semiconductor component designed for high-performance switching and amplification tasks in industrial electronics. This transistor die delivers reliable electrical characteristics suited for applications demanding consistent gain and low noise. With robust construction and optimized die architecture, it supports efficient integration in power control circuits, signal processing modules, and custom semiconductor assemblies. Engineers and sourcing specialists will find this transistor die advantageous for its stable operation over a wide range of conditions and its compatibility with various packaging and assembly processes. For detailed sourcing and technical support, visit IC Manufacturer.
JANKCC2N5151-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | NPN Bipolar Junction Transistor | |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector Current (IC) | 1.5 | A |
| Power Dissipation (Ptot) | 800 | mW |
| Gain Bandwidth Product (fT) | 100 | MHz |
| DC Current Gain (hFE) | 40?C100 | |
| Transition Frequency | 100 | MHz |
| Junction Temperature (Tj) | +150 | ??C |
| Package Type | Die only (bare transistor die) |
JANKCC2N5151-Transistor-Die Key Features
- High collector current capacity: Supports up to 1.5A, enabling efficient switching in medium power circuits.
- Wide voltage rating: Collector-emitter voltage rating of 60V ensures compatibility with diverse power supply levels.
- Excellent gain characteristics: DC current gain ranging from 40 to 100 delivers consistent amplification performance.
- High frequency operation: Transition frequencies up to 100 MHz allow usage in high-speed switching and RF applications.
- Thermal robustness: Junction temperature tolerance up to 150??C supports reliable operation in demanding thermal environments.
- Compact bare die format: Facilitates custom integration and packaging flexibility in advanced semiconductor modules.
Typical Applications
- Power management circuits requiring medium current switching with stable gain and voltage tolerance.
- Signal amplification stages in industrial control and instrumentation systems.
- Custom semiconductor assemblies where bare transistor dies are integrated into multi-chip modules.
- High-frequency switching circuits in communication and RF devices.
JANKCC2N5151-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers a superior combination of current handling, voltage rating, and frequency response compared to typical discrete transistors. Its bare die format enables tighter integration in custom semiconductor assemblies, reducing parasitic losses and improving thermal management. The robust gain and high junction temperature tolerance enhance reliability in industrial applications where environmental and electrical stresses are common. These advantages make it a preferred choice for engineers focused on precision, durability, and efficient design integration.
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JANKCC2N5151-Transistor-Die Brand Info
The JANKCC2N5151 transistor die is manufactured by a leading semiconductor foundry recognized for producing high-quality bipolar junction transistors (BJTs) in bare die form. This product aligns with industry standards for transistor die fabrication, ensuring consistent electrical performance and mechanical robustness. The brand is known for supporting semiconductor manufacturers and assembly houses with detailed technical documentation, reliable supply chain management, and broad compatibility with packaging technologies. This transistor die is part of a product family widely used across industrial
