JANKCC2N5151 Overview
The JANKCC2N5151 is a high-performance N-channel MOSFET designed for efficient power switching and amplification applications. Its optimized low on-resistance and fast switching capabilities make it ideal for industrial power management and control circuits. With robust thermal performance and reliable operation under varied conditions, this device supports enhanced energy efficiency and system stability. Engineers and sourcing specialists will find the JANKCC2N5151 a dependable choice for demanding electronic designs requiring precision and durability. Learn more at IC Manufacturer.
JANKCC2N5151 Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall power efficiency in switching applications.
- High Current Capability: Supports substantial load currents, enabling use in high-power circuits with reliable performance.
- Fast Switching Speed: Reduces switching losses and electromagnetic interference, enhancing circuit response and efficiency.
- Compact Package Design: Facilitates easy integration into space-constrained industrial and consumer electronic systems.
JANKCC2N5151 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | N-Channel MOSFET | – |
| Drain-Source Voltage (Vds) | 30 | V |
| Continuous Drain Current (Id) | 4.5 | A |
| Gate Threshold Voltage (Vgs(th)) | 1.0 – 2.5 | V |
| Drain-Source On-Resistance (Rds(on)) | 0.055 | ?? |
| Total Gate Charge (Qg) | 12 | nC |
| Power Dissipation (Pd) | 1.25 | W |
| Operating Temperature Range | -55 to 150 | ??C |
JANKCC2N5151 Advantages vs Typical Alternatives
This MOSFET offers a lower on-resistance and higher current capacity compared to standard alternatives, improving energy efficiency and thermal management. Its fast switching characteristics reduce losses, making it ideal for power-sensitive applications. The compact footprint and robust specifications provide better integration flexibility and reliability in industrial environments, supporting longer service life and consistent performance.
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Typical Applications
- Power management in DC-DC converters, where efficient switching and thermal stability are critical for system reliability and energy savings.
- Motor driver circuits requiring high current handling and fast switching to optimize performance and reduce heat generation.
- Load switching applications in industrial control systems for precise and reliable power delivery.
- Battery protection and management circuits in portable and stationary power systems to ensure safety and longevity.
JANKCC2N5151 Brand Info
The JANKCC2N5151 is part of a trusted product lineup known for quality and performance in power semiconductor devices. Manufactured under stringent quality controls, this MOSFET reflects a commitment to delivering components that meet industrial standards. Its design focuses on balancing electrical performance with durability, catering to engineers who demand reliable and efficient power solutions.
FAQ
What is the maximum voltage rating of the JANKCC2N5151?
The device features a maximum drain-source voltage rating of 30 volts, making it suitable for moderate voltage power switching applications within industrial and consumer electronics.
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How does the on-resistance affect the device??s efficiency?
A lower drain-source on-resistance reduces conduction losses during operation, which directly improves power efficiency and reduces heat generation, enhancing overall system reliability.
Can this MOSFET handle high current loads continuously?
Yes, the continuous drain current rating of 4.5 amperes allows handling of substantial load currents, suitable for many industrial control and power management applications.
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What is the operating temperature range for reliable use?
The device is rated for operation across a wide temperature range from -55 to 150 degrees Celsius, ensuring stable performance in harsh environments and industrial conditions.
Is the JANKCC2N5151 suitable for fast switching applications?
Yes, with a low total gate charge of 12 nanocoulombs, it supports fast switching speeds that reduce switching losses and improve device efficiency in high-frequency circuits.
