JANKCC2N3501-Transistor-Die High-Performance Amplifier Transistor Bare Die Package

  • This transistor die amplifies electrical signals, enabling efficient control in electronic circuits.
  • Its core electrical parameters support consistent switching performance, ensuring stable operation.
  • The die??s compact form factor allows integration into tight spaces, optimizing board layout.
  • Ideal for signal amplification in communication devices, enhancing clarity and response times.
  • Manufactured under controlled conditions to maintain reliability and long-term functional integrity.
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产品上方询盘

JANKCC2N3501-Transistor-Die Overview

The JANKCC2N3501-Transistor-Die is a precision semiconductor component designed for medium power amplification and switching applications. Featuring reliable electrical characteristics and a robust die structure, this transistor die provides consistent performance under various operating conditions. Its compact form factor and proven fabrication technology make it suitable for integration in high-frequency circuits and power control devices. Engineered for efficiency and stability, the device supports engineers and sourcing specialists in optimizing circuit designs where dependable transistor dies are critical. For detailed specifications and application guidance, visit IC Manufacturer.

JANKCC2N3501-Transistor-Die Key Features

  • High current capacity: Supports medium power levels, enabling effective amplification in power control circuits.
  • Stable gain characteristics: Ensures consistent amplification performance, reducing distortion and improving signal integrity.
  • Robust thermal handling: Designed to dissipate heat efficiently, enhancing reliability in high-temperature environments.
  • Compact die size: Facilitates easy integration into multi-chip modules and hybrid circuits, optimizing space utilization.

JANKCC2N3501-Transistor-Die Technical Specifications

ParameterSpecification
TypeTransistor Die
PolarityNPN
Collector-Emitter Voltage (Vce)60 V
Collector Current (Ic)2 A
Power Dissipation (Pd)15 W
Transition Frequency (fT)100 MHz
Gain Bandwidth Product100 MHz
Package TypeDie (bare chip)
Operating Temperature Range-55??C to +150??C

JANKCC2N3501-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior thermal stability and reliable gain compared to typical alternatives, ensuring enhanced performance in power amplification tasks. Its compact bare die format enables flexible integration in space-constrained designs, while the robust current handling supports efficient switching and amplification. These advantages translate into improved circuit reliability and longevity, making it a preferred choice in demanding industrial electronics applications.

Typical Applications

  • Power amplifiers in audio and RF circuits where medium power handling and consistent gain are essential for signal fidelity and output strength.
  • Switching regulators and power management modules requiring reliable transistor dies to maintain stable operation under varying load conditions.
  • Hybrid integrated circuits benefiting from the compact die size for space optimization and efficient thermal management.
  • Industrial control systems that demand robust semiconductor components for precise power control and long-term reliability.

JANKCC2N3501-Transistor-Die Brand Info

The JANKCC2N3501-Transistor-Die is manufactured by a reputable supplier specializing in high-quality semiconductor components tailored for industrial and commercial electronics. This product line emphasizes precision engineering and quality control to deliver transistor dies that meet rigorous performance and reliability standards. The brand maintains a strong commitment to supporting engineers and sourcing professionals by providing detailed datasheets, technical support, and consistent supply availability.

FAQ

What is the maximum collector current rating for the JANKCC2N3501-Transistor-Die?

The maximum collector current rating for this transistor die is 2 amperes. This allows it to handle medium power applications efficiently without compromising device integrity or performance.

Can this transistor die operate in high-temperature environments?

Yes, the device is specified to operate reliably within a temperature range from -55??C up to +150??C, making it suitable for many industrial and automotive environments where temperature extremes are common.

Is the JANKCC2N3501 suitable for high-frequency applications?

With a transition frequency of approximately 100 MHz, this transistor die supports moderate high-frequency amplification and switching tasks, allowing integration into RF and communication circuits requiring stable gain at these frequencies.

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产品中间询盘

What packaging format does this transistor die come in?

This product is supplied as a bare die without encapsulation or packaging. This format is ideal for designers requiring direct die integration into hybrid modules or custom packages for enhanced thermal or electrical performance.

How does the thermal dissipation capability benefit circuit design?

The transistor die??s 15-watt power dissipation rating helps manage heat effectively during operation, reducing the risk of thermal runaway and improving overall device reliability. This is particularly important in power amplification and switching applications where heat generation is significant.

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