JANKCBR2N5004-Transistor-Die by JANKCBR2N5004 | High-Performance Amplifier Transistor Die

  • This transistor die enables efficient switching and amplification for improved circuit performance.
  • Its compact die size reduces board space, allowing denser electronic designs and easier integration.
  • Ideal for power management applications, it supports reliable operation under varying electrical loads.
  • Designed to handle thermal stresses effectively, ensuring consistent functionality in demanding environments.
  • The JANKCBR2N5004-Transistor-Die offers robust quality control to maintain long-term device stability.
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产品上方询盘

JANKCBR2N5004-Transistor-Die Overview

The JANKCBR2N5004-Transistor-Die is a high-performance semiconductor component designed for precision switching and amplification in electronic circuits. Engineered with advanced die technology, it offers reliable electrical characteristics suitable for industrial and commercial applications. Its robust construction ensures consistent operation under varying conditions, making it an ideal choice for engineers seeking durable transistor die solutions. This transistor die supports efficient integration into power management and signal processing systems. For detailed sourcing and technical assistance, visit IC Manufacturer.

JANKCBR2N5004-Transistor-Die Key Features

  • High current handling capability: Allows for effective power switching, improving circuit efficiency and performance.
  • Low saturation voltage: Minimizes power loss during conduction, enhancing overall system reliability.
  • Thermally robust die structure: Ensures long-term stability and reduces thermal-induced failures in demanding environments.
  • Compact die size: Facilitates integration into compact modules and supports scalable manufacturing processes.

JANKCBR2N5004-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (VCEO)500 V
Collector Current (IC)2 A
Power Dissipation (Ptot)30 W
DC Current Gain (hFE)40 ?C 160
Transition Frequency (fT)60 MHz
Junction Temperature (Tj)150??C Max
Collector-Base Voltage (VCBO)600 V
Emitter-Base Voltage (VEBO)5 V

JANKCBR2N5004-Transistor-Die Advantages vs Typical Alternatives

This transistor die provides superior voltage and current ratings compared to typical alternatives, delivering enhanced switching performance and thermal stability. Its low saturation voltage reduces power dissipation, improving energy efficiency and reliability in demanding industrial circuits. The compact die design allows for seamless integration in high-density applications, making it a preferred choice for engineers requiring robust and efficient transistor dies.

Typical Applications

  • Power amplification circuits in industrial control systems, where reliable switching and high voltage tolerance are critical for operational stability and efficiency.
  • Switching regulators, enabling efficient power conversion with minimized losses for improved energy management.
  • Signal processing modules requiring precise transistor gain and frequency response characteristics.
  • Embedded electronics in automotive and consumer appliances, supporting durable and thermal-resilient transistor operation.

JANKCBR2N5004-Transistor-Die Brand Info

The JANKCBR2N5004-Transistor-Die is manufactured by a leading semiconductor producer known for delivering high-quality and reliable transistor components. This product line reflects the brand??s commitment to precision engineering and robust performance in industrial electronics. The transistor die undergoes stringent quality control and testing to meet rigorous industry standards, ensuring dependable operation in diverse applications.

FAQ

What are the maximum voltage ratings for this transistor die?

The transistor die supports a maximum collector-emitter voltage of 500 V, a collector-base voltage of 600 V, and an emitter-base voltage of 5 V. These ratings ensure the device can operate safely under high-voltage conditions typical in industrial applications.

How does the current handling capability impact performance?

The maximum collector current is rated at 2 A, allowing the die to handle significant load currents without degradation. This capability is essential for power switching and amplification tasks requiring stable current flow and minimal thermal stress.

What is the significance of the transistor’s transition frequency?

The transition frequency of 60 MHz indicates the transistor die??s capability to operate efficiently at high switching speeds, which is beneficial in applications demanding fast signal processing and frequency response.

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产品中间询盘

What thermal limits should be considered when using this transistor die?

The junction temperature maximum of 150??C defines the thermal operating boundary to maintain device reliability. Proper heat dissipation and thermal management are critical to prevent performance loss or damage during operation.

Can this transistor die be integrated into compact electronic assemblies?

Yes, the die??s compact size is designed to facilitate integration into high-density modules and small form-factor assemblies, supporting modern electronics?? miniaturization requirements without compromising performance.

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