JANKCBR2N5002-Transistor-Die Overview
The JANKCBR2N5002-Transistor-Die is a high-performance semiconductor component designed for precise amplification and switching applications in industrial electronics. This transistor die offers reliable electrical characteristics essential for integration into custom packages or hybrid circuits. Featuring robust breakdown voltage and optimized current handling capabilities, it supports demanding power management tasks. Its compact die form factor allows engineers and sourcing specialists to tailor device packaging for specific applications, ensuring flexibility and efficiency. For more detailed technical data and procurement options, visit the IC Manufacturer website.
JANKCBR2N5002-Transistor-Die Key Features
- High breakdown voltage: Ensures device integrity under high-voltage conditions, enhancing operational safety in power circuits.
- Optimized current gain: Provides efficient signal amplification, improving overall circuit performance and reducing power loss.
- Compact die size: Facilitates flexible integration into various packaging solutions, supporting custom module designs.
- Thermally stable operation: Maintains consistent performance across temperature ranges, increasing reliability in industrial environments.
JANKCBR2N5002-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Breakdown Voltage (VCEO) | 500 V |
| Collector Current (IC) | 2 A (max) |
| Power Dissipation (PD) | Variable by package (die only) |
| DC Current Gain (hFE) | 50?C200 (typical) |
| Transition Frequency (fT) | Up to 100 MHz |
| Junction Temperature (TJ) | 150 ??C (max) |
| Base-Emitter Voltage (VBE) | 1.2 V (typical) |
| Package Type | Bare die (for custom packaging) |
JANKCBR2N5002-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage handling and current gain compared to many standard discrete transistors, enabling enhanced sensitivity and precision in power switching and amplification circuits. Its bare die format allows for tailored packaging solutions, promoting superior thermal management and integration flexibility. These qualities make it an ideal choice where reliability and performance are critical, outperforming typical packaged transistors in customized industrial applications.
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Typical Applications
- Power management modules in industrial automation systems, requiring high-voltage switching and thermal reliability for extended operation.
- Custom semiconductor assemblies where compact transistor dies enable space-saving and tailored electrical performance.
- Amplification stages in precision analog circuits demanding stable current gain and frequency response.
- Hybrid circuits in automotive electronics, benefiting from robust die-level transistor performance under harsh conditions.
JANKCBR2N5002-Transistor-Die Brand Info
The JANKCBR2N5002-Transistor-Die is developed and supplied by a recognized semiconductor manufacturer specializing in high-quality transistor technologies. This product exemplifies the company??s commitment to delivering versatile, reliable, and technically advanced components suited for integration into custom packages and industrial applications. The brand focuses on providing comprehensive datasheets, support, and sourcing options to assist engineers and procurement specialists in selecting the right transistor die for their designs.
FAQ
What is the maximum collector-emitter voltage rating of this transistor die?
The transistor die has a maximum collector-emitter breakdown voltage of 500 V, making it suitable for high-voltage switching applications and ensuring device durability under elevated voltage stress.
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Can this transistor die be used directly in circuits without packaging?
No, the JANKCBR2N5002 is provided as a bare transistor die. It requires proper packaging or integration into a hybrid circuit to ensure electrical connections, thermal management, and mechanical protection before use in a final product.
What are the typical current handling capabilities of this transistor die?
The device supports a maximum collector current of 2 A, which is suitable for medium-power amplification and switching roles in industrial electronics where moderate current flow is required.
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How does the die format benefit engineers and designers?
The bare die format allows for custom packaging and integration, enabling designers to optimize thermal performance and electrical layout according to specific application needs, which is especially valuable in space-constrained or high-reliability systems.
Is this transistor die suitable for high-frequency applications?
Yes, the device supports a transition frequency up to approximately 100 MHz, making it appropriate for moderate frequency amplification and switching tasks in communication and signal processing circuits.
