JANKCBR2N2906A-Transistor-Die PNP Transistor Die for Amplification ?C Bare Die Package

JANKCBR2N2906A-Transistor-Die Overview

The JANKCBR2N2906A-Transistor-Die is a precision PNP bipolar junction transistor die widely used in industrial and electronic circuit designs. This transistor die offers reliable performance with well-defined electrical characteristics, making it suitable for switching, amplification, and general-purpose applications. The die format allows for integration into custom semiconductor packages or hybrid circuits, providing flexibility for engineers and sourcing specialists seeking a high-quality transistor core. Manufactured under strict quality standards, this transistor die ensures stable operation across a range of conditions, supporting efficient signal processing and power management in diverse electronic systems. For further details, visit IC Manufacturer.

JANKCBR2N2906A-Transistor-Die Technical Specifications

JANKCBR2N2906A-Transistor-Die Key Features

• High Gain Performance: The transistor die delivers a DC current gain typically ranging from 100 to 300, ensuring effective signal amplification in low-power applications.
• Voltage Handling Capability: With maximum collector-emitter voltage of ?C40 V and collector-base voltage of ?C60 V, it supports robust operation in moderate voltage circuits.
• Compact Die Format: The bare silicon die structure enables flexible integration into custom semiconductor packages or hybrid modules, optimizing space and design versatility.
• Moderate Power Dissipation: Rated for 625 mW at room temperature, the device supports efficient heat management in compact electronic assemblies.

Typical Applications

• Used in low to medium power amplification circuits, the transistor die suits audio amplifiers and signal processing where precise gain control is required.
• Ideal for switching applications in industrial control systems, enabling reliable on/off control of loads within specified voltage and current limits.
• Employed in voltage regulation and stabilization circuits, contributing to system reliability by managing current flow effectively.
• Utilized in hybrid integrated circuits where space constraints demand compact, bare die solutions for enhanced circuit density.

JANKCBR2N2906A-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers a combination of moderate voltage tolerance and high current gain, making it advantageous over standard packaged transistors by allowing flexible integration in customized assemblies. The bare die format reduces parasitic elements often found in packaged devices, improving switching speed and frequency response. Additionally, its reliable power dissipation rating supports stable performance under thermal stress, enhancing durability compared to typical discrete alternatives.

JANKCBR2N2906A-Transistor-Die Brand Info

The JANKCBR2N2906A transistor die is derived from the classic 2N2906A transistor design, a well-established PNP silicon transistor widely produced by various semiconductor manufacturers. This die-level product is typically supplied by specialized IC manufacturers and semiconductor foundries focusing on bare die solutions for custom applications. Known for its consistent electrical characteristics and long-term reliability, the transistor die reflects the legacy of the 2N2906A series, favored for general-purpose amplification and switching tasks in industrial and consumer electronics.

FAQ

What electrical parameters define the maximum operating limits of the transistor die?

The maximum operating limits include a collector-emitter voltage of ?C40 V, collector-base voltage of ?C60 V, and emitter-base voltage of ?C5 V. Additionally, the device can handle a collector current up to ?C600 mA and dissipate power up to 625 mW at 25??C, ensuring safe operation within these boundaries.