JANKCBP2N5004-Transistor-Die Overview
The JANKCBP2N5004-Transistor-Die is a high-performance semiconductor component designed for efficient power switching and amplification in industrial and electronic circuits. This transistor die offers precise electrical characteristics essential for reliable operation in demanding environments. Its compact die form factor allows seamless integration into custom package designs or hybrid modules, enhancing design flexibility. Manufactured with advanced semiconductor processes, it ensures consistent performance, thermal stability, and electrical efficiency. Engineers and sourcing specialists can leverage this transistor die for applications requiring robust switching capability and high current handling, supported by IC Manufacturer??s quality assurance standards.
JANKCBP2N5004-Transistor-Die Key Features
- High current capacity: Supports significant continuous collector current, enabling effective power management in high-load circuits.
- Low saturation voltage: Minimizes power loss during switching, improving overall energy efficiency and thermal performance.
- Robust breakdown voltage: Ensures reliable operation under high-voltage conditions, reducing the risk of device failure.
- Superior gain characteristics: Provides stable amplification, facilitating precise signal control in analog and switching applications.
JANKCBP2N5004-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) Die |
| Collector-Emitter Voltage (Vceo) | 500 V |
| Collector Current (Ic) | 4 A |
| Power Dissipation (Pd) | 50 W (die level, dependent on heat sinking) |
| Gain Bandwidth Product (fT) | ??50 MHz |
| Saturation Voltage (Vce(sat)) | ??1.5 V at Ic=4A |
| Junction Temperature (Tj) | -55??C to +150??C |
| Package Type | Bare transistor die for custom packaging |
| Base-Emitter Voltage (Vbe(on)) | 1.2 V typical |
JANKCBP2N5004-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers enhanced voltage tolerance and current handling compared to typical discrete transistors, delivering superior power efficiency and thermal stability. Its bare die format allows integration flexibility unmatched by packaged devices, reducing parasitic inductances and enabling optimized thermal management. The device??s reliable gain and low saturation voltage contribute to improved switching accuracy and lower power loss, making it a preferred choice for industrial power electronics and high-performance analog circuits.
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Typical Applications
- Power switching circuits in industrial motor drives, where high voltage and current handling are critical for efficient operation and durability.
- Amplification stages in audio and RF equipment requiring stable gain and low distortion.
- DC-DC converters and power management modules demanding compact, reliable transistor dies for custom assembly.
- Automotive electronic control units (ECUs) that rely on robust semiconductor components for harsh environment performance.
JANKCBP2N5004-Transistor-Die Brand Info
The JANKCBP2N5004-Transistor-Die is produced by IC Manufacturer, a leader in semiconductor technology known for precision-engineered transistor dies and power components. This product reflects the company??s commitment to quality, performance, and innovation in semiconductor fabrication. Designed for integration into complex power electronics and custom packages, it delivers consistent electrical characteristics and reliability, supporting a wide range of industrial and commercial applications.
FAQ
What type of transistor is the JANKCBP2N5004-Transistor-Die?
It is an NPN Bipolar Junction Transistor (BJT) die designed for efficient power switching and amplification, suitable for integration into custom packages or hybrid modules.
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What is the maximum voltage rating of this transistor die?
The device supports a collector-emitter voltage (Vceo) of up to 500 volts, allowing it to operate reliably in high-voltage environments.
Can the transistor die handle high current loads?
Yes, it is rated for a continuous collector current of 4 amperes, making it suitable for power applications requiring substantial current handling.
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How does the bare die format benefit circuit design?
The bare die format allows designers to integrate the transistor directly into custom packages or hybrid circuits, reducing parasitic elements and improving thermal dissipation compared to standard packaged transistors.
What operating temperature range does this transistor die support?
The transistor die is rated for junction temperatures from -55??C up to +150??C, ensuring reliable performance across a wide range of industrial operating conditions.
